switching and amplification transistor Nexperia BC817DS115 NPN NPN general purpose double transistor

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The Nexperia BC817DS is an NPN/NPN general-purpose double transistor designed for switching and amplification applications. This device offers reduced component count and pick and place costs, making it an efficient choice for various electronic designs. It is AEC-Q101 qualified, ensuring suitability for automotive applications.

Product Attributes

Brand: Nexperia
Product Type: NPN/NPN general purpose double transistors
Complementary PNP/PNP: BC807DS
Complementary NPN/PNP: BC817DPN
Qualification: AEC-Q101 qualified

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Per transistor
VCEO	Collector-emitter voltage	Open base	-	-	45	V
IC	Collector current	-	-	-	500	mA
ICM	Peak collector current	Single pulse; tp 1 ms	-	-	1	A
hFE	DC current gain	VCE = 1 V; IC = 100 mA	160	-	400	[1]
VCBO	Collector-base voltage	Open emitter	-	-	50	V
VEBO	Emitter-base voltage	Open collector	-	-	5	V
IBM	Peak base current	Single pulse; tp 1 ms	-	-	200	mA
Ptot	Total power dissipation	Tamb 25 C	-	-	370	mW
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-65	-	150	C
Tstg	Storage temperature	-	-65	-	150	C
Per device
Ptot	Total power dissipation	Tamb 25 C	-	-	600	mW
Thermal characteristics
Rth(j-a)	Thermal resistance from junction to ambient	In free air [1]	-	-	208	K/W
Characteristics (Tamb = 25 C unless otherwise specified)
ICBO	Collector-base cut-off current	VCB = 20 V; IE = 0 A	-	-	100	nA
ICBO	Collector-base cut-off current	VCB = 20 V; IE = 0 A; Tj = 150 C	-	-	5	A
IEBO	Emitter-base cut-off current	VEB = 5 V; IC = 0 A	-	-	100	nA
hFE	DC current gain	VCE = 1 V; IC = 100 mA [1]	160	-	400	-
hFE	DC current gain	VCE = 1 V; IC = 500 mA [1]	40	-	-	-
VCEsat	Collector-emitter saturation voltage	IC = 500 mA; IB = 50 mA [1]	-	-	700	mV
VBE	Base-emitter voltage	VCE = 1 V; IC = 500 mA [1] [2]	-	-	1.2	V
Cc	Collector capacitance	VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz	-	5	-	pF
fT	Transition frequency	VCE = 5 V; IC = 10 mA; f = 100 MHz	100	-	-	MHz