Nexperia PBSS4350Z135 50 volt NPN transistor with high collector current and low saturation voltage
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Product Description
Product Overview
The Nexperia PBSS4350Z is a 50 V low VCEsat NPN transistor designed for power management applications. It offers a low collector-emitter saturation voltage, high collector current capability, and high DC current gain at high collector currents, leading to increased efficiency and reduced heat generation. This transistor is AEC-Q101 qualified and is suitable for use in DC/DC converters, supply line switching, battery chargers, linear voltage regulation (LDO), peripheral drivers, and inductive load drivers.
Product Attributes
- Brand: Nexperia
- Product Type: NPN Transistor
- Qualification: AEC-Q101
- Package Type: SOT223 (SC-73)
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | open base | - | - | 50 | V |
| IC | Collector current | - | - | - | 3 | A |
| ICM | Peak collector current | single pulse; tp 1 ms | - | - | 5 | A |
| hFE | DC current gain | VCE = 2 V; IC = 500 mA; Tamb = 25 C | 200 | - | - | - |
| RCEsat | Collector-emitter saturation resistance | IC = 2 A; IB = 200 mA; Tamb = 25 C | - | 110 | 145 | m |
| VCBO | Collector-base voltage | open emitter | - | - | 60 | V |
| VEBO | Emitter-base voltage | open collector | - | - | 6 | V |
| IBM | Peak base current | single pulse; tp 1 ms | - | - | 1 | A |
| Ptot | Total power dissipation | Tamb 25 C | - | 1.35 | 2 | W |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air [1] | - | - | 92 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air [2] | - | - | 62.5 | K/W |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tj = 150 C | - | - | 50 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 100 | nA |
| hFE | DC current gain | VCE = 2 V; IC = 500 mA; Tamb = 25 C [1] | 200 | - | - | - |
| hFE | DC current gain | VCE = 2 V; IC = 1 A; Tamb = 25 C [1] | 200 | - | - | - |
| hFE | DC current gain | VCE = 2 V; IC = 2 A; Tamb = 25 C [1] | 100 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 500 mA; IB = 50 mA; Tamb = 25 C [1] | - | - | 90 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 1 A; IB = 50 mA; Tamb = 25 C [1] | - | - | 170 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 2 A; IB = 200 mA; Tamb = 25 C [1] | - | - | 290 | mV |
| RCEsat | Collector-emitter saturation resistance | - | - | 110 | 145 | m |
| VBEsat | Base-emitter saturation voltage | IC = 2 A; IB = 200 mA; Tamb = 25 C [1] | - | - | 1.2 | V |
| VBEon | Base-emitter turn-on voltage | VCE = 2 V; IC = 1 A; Tamb = 25 C [1] | - | - | 1.1 | V |
| fT | Transition frequency | VCE = 5 V; IC = 100 mA; f = 100 MHz; Tamb = 25 C | 100 | - | - | MHz |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 30 | pF |
[1] Pulse test: tp 300 s; 0.02
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
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