Load Switching and PWM Control MOSFET MIRACLE POWER MU3012Y with Advanced Trench Technology Features

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Product Description

Product Overview

The MU3012Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., engineered with Advanced Trench Technology. It offers excellent RDS(ON) and low gate charge, making it suitable for demanding applications such as load switching, PWM applications, and power management. This MOSFET is 100% EAS guaranteed and features a 30V drain-source voltage and a continuous drain current of 80A.

Product Attributes

Brand: Miracle Technology Co., Ltd.
Technology: Advanced Trench Technology
Channel Type: N-Channel Enhancement Mode
Package Information: PDFN5*6

Technical Specifications

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit
General Features
	Voltage			30		V
	Current			80		A
RDS(ON)	Static Drain-Source On-Resistance	VGS = 10V, ID = 30A		2.6	3.4	m
EAS	Single Pulsed Avalanche Energy	L = 0.5mH, VDD = 25V, IAS = 26A, RG = 25 Starting TJ = 25 .		169		mJ
Absolute Maximum Ratings
VDS	Drain-Source Voltage				30	V
VGS	Gate-Source Voltage		-20		20	V
ID	Drain Current-Continuous (TC = 25C)				80	A
ID	Drain Current-Continuous (TC = 100C)				51	A
IDM	Drain Current-Pulsed				320	A
PD	Maximum Power Dissipation				24.5	W
TJ, TSTG	Operating and Store Temperature Range		-55		150	C
Thermal Characteristics
RJC	Thermal Resistance, Junction to Case			5.1		C/W
RJA	Thermal Resistance, Junction to Ambient			34		C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS = 0V, ID = 250A	30	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS = 30V, VGS = 0V	-	-	1.0	A
IGSS	Forward Gate Body Leakage Current	VDS = 0V, VGS = 20V	-	-	100	nA
On Characteristics
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250A	1.0	1.6	2.5	V
RDS(on)	Static Drain-Source On-Resistance	VGS = 10V, ID = 30A	-	2.6	3.4	m
RDS(on)	Static Drain-Source On-Resistance	VGS = 4.5V, ID = 20A	-	4.0	5.2	m
Dynamic Characteristics
Ciss	Input Capacitance	VDS = 15V, VGS = 0V, f = 1.0MHz	-	3089	-	pF
Coss	Output Capacitance		-	372	-	pF
Crss	Reverse Transfer Capacitance		-	302	-	pF
Switching Characteristics
td(on)	Turn-On Delay Time	VDD = 15V, VGS = 10V, ID = 30A, RGEN = 3	-	11	-	ns
tr	Turn-On Rise Time		-	29	-	ns
td(off)	Turn-Off Delay Time		-	47	-	ns
tf	Turn-Off Fall Time		-	18	-	ns
Qg	Total Gate Charge	VDS = 15V, VGS = 0 to 10V, ID = 30A	-	58	-	nC
Qgs	Gate-Source Charge		-	12	-	-
Qgd	Gate-Drain Charge		-	13	-	-
Drain-Source Diode Characteristics
IS	Drain-Source Diode Forward Continuous Current	VG = VD = 0V, Force Current	-	-	80	A
ISM	Maximum Pulsed Current		-	-	320	A
VSD	Drain-Source Diode Forward Voltage	VGS = 0V, IS = 30A	-	-	1.2	V
Trr	Body Diode Reverse Recovery Time	IF = 30A, di/dt = 100A/s	-	16	-	ns
Qrr	Body Diode Reverse Recovery Charge	IF = 30A, di/dt = 100A/s	-	7	-	nC