Low RDS ON 600V N Channel Power MOSFET NH NPS16N60F Suitable for SMPS UPS and LED Driver Applications
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Product Description
Product Overview
The NPS16N60F is a 600V N-Channel Enhancement Mode Power MOSFET from Niu Hang Semiconductor. It features low RDS(ON), ultra-low gate charge, and is RoHS compliant. This MOSFET is 100% UIS and RG tested, making it suitable for applications such as adapters, PCs, PD chargers, LED drivers, and switched-mode power supplies (SMPS), including Uninterruptible Power Supplies (UPS). Its robust design and electrical characteristics ensure reliable performance in demanding power applications.
Product Attributes
- Brand: Niu Hang (NH)
- Model: NPS16N60F
- Compliance: RoHS Compliant
- Testing: 100% UIS and RG Tested
- Package Type: TO-220F
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||
| Drain-Source Voltage | VDS | 600 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current | ID | Ta= 25 (Note 1) | 16.0 | A | ||
| Drain Current-Pulsed | IDM | TJ | 64 | A | ||
| Maximum Power Dissipation | PD | Ta= 25 (Note 1) | 100.0 | W | ||
| Power Dissipation Derating Factor above 25 | DF | Ta= 100 | 1.79 | W/ | ||
| Junction Temperature | TJ | -55 | 150 | |||
| Storage temperature range | TSTD | -55 | 150 | |||
| Avalanche Current,Single pulse | IAS | L= 10 mH,VDD=50V (Note 1) | 12.6 | A | ||
| Single Pulse Avalanche Energy | EAS | TJ =25 (Note 1) | 794 | mJ | ||
| Thermal Characteristcs | ||||||
| Thermal Resistance Junction to Ambient | RJA | (Note 2) | 70 | /W | ||
| Thermal Resistance Junction-Case | RJC | (Note 2) | 28 | /W | ||
| Electrical Characteristcs | ||||||
| Drain-Source Breakdown Voltage | BV DSS | VGS=0V, ID=250uA | 600 | V | ||
| Temperature Coefficient | BV DSS /T J | VGS=0V, ID=250uA,Reference25 | 0.65 | V/ | ||
| Drain-Source Leakage Current | IDSS | VDS= 600V,VGS=0V | 1.0 | uA | ||
| Gate-Body Leakage Current | IGSS | VGS= 30V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VDS= VGS, ID=250uA | 2.0 | 3.0 | V | |
| Drain-Source On Resistance | RDS(ON) | ID=16A, VGS=10V | 0.41 | 0.50 | ||
| Input Capacitance | Ciss | VDS= 25V, VGS=0V, f=1MHz | 2640 | pF | ||
| Output Capacitance | Coss | VDS= 25V, VGS=0V, f=1MHz | 230 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS= 25V, VGS=0V, f=1MHz | 15.0 | pF | ||
| Dynamic Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDS= 300V, ID= 16A, VGS= 10V, RG= 10 | 14 | ns | ||
| Turn-On Rise Time | tr | VDS= 300V, ID= 16A, VGS= 10V, RG= 10 | 18 | ns | ||
| Turn-Off Delay Time | td(off) | VDS= 300V, ID= 16A, VGS= 10V, RG= 10 | 420 | ns | ||
| Turn-Off Rise Time | tf | VDS= 300V, ID= 16A, VGS= 10V, RG= 10 | 88 | ns | ||
| Total Gate Charge | Qg | VDS= 300V, ID= 16A, VGS= 10V | 54 | nC | ||
| Gate-Source Charge | Qgs | VDS= 300V, ID= 16A, VGS= 10V | 13 | nC | ||
| Gate-Drain Charge | Qgd | VDS= 300V, ID= 16A, VGS= 10V | 16 | nC | ||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Max. Diode Forward Cuurent | IS | VGS=0V | 16 | A | ||
| Max. Pulsed Forward Cuurent | ISM | VGS=0V | 64 | A | ||
| Diode Forward Voltage | VSD | IS= 16A, VGS=0V | 0.85 | 1.4 | V | |
| Reverse Recovery Time | trr | IS= 16A, di/dt= 100 A/us | 420 | ns | ||
| Reverse Recovery Charge | Qrr | IS= 16A, di/dt= 100 A/us | 4.8 | C | ||
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Sellina