N Channel Power MOSFET with Low On Resistance and Easy Gate Switching Control MIRACLE POWER MJQ30N65F
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Product Description
Product Overview
The MJQ30N65F is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring Advanced Super Junction Technology. This MOSFET offers a 650V breakdown voltage, a continuous drain current of 30A, and a low on-resistance of 105m (typ.) at VGS = 10V. It is designed for easy gate switching control and is 100% avalanche tested. Ideal applications include server power, telecom power, EV charging, solar inverters, UPS, and various power supply topologies such as Boost PFC, Half bridge, Asymmetric half bridge, Series resonance half bridge, and full bridge.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Technology: Advanced Super Junction Technology
- Testing: 100% Avalanche Tested
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 650 | V | |||
| VGS | Gate-Source Voltage | ±30 | V | |||
| ID | Drain Current-Continuous, TC = 25°C | 30 | A | |||
| IDM | Drain Current-Pulsed | 90 | A | |||
| PD | Maximum Power Dissipation, TC = 25°C | 277.8 | W | |||
| dv/dt | Peak Diode Recovery dv/dt | 50 | V/ns | |||
| EAS | Single Pulsed Avalanche Energy | 1125 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 to 150 | 150 | °C | ||
| Thermal Characteristics | ||||||
| RθJC | Thermal Resistance, Junction to Case | 0.45 | °C/W | |||
| RθJA | Thermal Resistance, Junction to Ambient | 57 | °C/W | |||
| Electrical Characteristics (TJ = 25°C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250μA | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | - | - | 2 | μA |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250μA | 3.0 | - | 5.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 15A | - | 105 | 120 | mΩ |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | f = 1.0MHz | - | 12.6 | - | Ω |
| Ciss | Input Capacitance | VDS = 100V, VGS = 0V, f = 1.0MHz | - | 2566 | - | pF |
| Coss | Output Capacitance | - | 90.8 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 1.8 | - | pF | |
| On Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, VGS = 10V, ID = 19A, RG = 2Ω | - | 32 | - | ns |
| tr | Turn-On Rise Time | - | 62 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 100 | - | ns | |
| tf | Turn-Off Fall Time | - | 59 | - | ns | |
| Qg | Total Gate Charge | VDD = 400V, VGS = 0 to 10V, ID = 19A | - | 58.3 | - | nC |
| Qgs | Gate-Source Charge | - | 18.8 | - | nC | |
| Qgd | Gate-Drain Charge | - | 20.6 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IF = 1A | - | 0.67 | - | V |
| Trr | Body Diode Reverse Recovery Time | VR = 400V, IF = 17A, dIF/dt = 100A/μs | - | 129 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | VR = 400V, IF = 17A, di/dt = 100A/μs | - | 0.821 | - | μC |
| Irrm | Peak reverse recovery current | VR = 400V, IF = 17A, di/dt = 100A/μs | - | 12.06 | - | A |
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