N Channel Power MOSFET Featuring 7A Continuous Drain Current MIRACLE POWER MPF07N80 for Power Supplies
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The MPF07N80 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-voltage applications. It features an 800V drain-source voltage rating, a continuous drain current of 7A, and a low on-resistance of 1.4 (typ.) at VGS = 10V. This MOSFET offers low gate charge and fast switching characteristics, making it suitable for various power supply applications including adapters, LCD panel power, e-bike chargers, and switching mode power supplies. It is 100% tested for single pulse avalanche energy and exhibits low reverse transfer capacitances.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: Power MOSFET
- Channel Type: N-Channel
- Technology: Miracle Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Drain-Source Voltage | 800 | V | ||||
| Drain Current-Continuous (TC =25C) | 7 | A | ||||
| RDS(ON) (Typ.) | VGS = 10V | 1.4 | 1.8 | |||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | (Tc = 25C unless otherwise noted) | 800 | V | ||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous, TC =25C | 7 | A | |||
| ID | Drain Current-Continuous, TC =100C | 4.2 | A | |||
| IDM | Drain Current-Pulsed | 28 | A | |||
| PD | Maximum Power Dissipation @ TJ =25C | 48 | W | |||
| EAS | Single Pulsed Avalanche Energy | 500 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-Case | 2.6 | C/W | |||
| RJA | Thermal Resistance Junction-Ambient | 62.5 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 800 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 800V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 2 | - | 4 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID =3.5A | - | 1.4 | 1.8 | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 1443 | - | pF |
| Coss | Output Capacitance | - | 118 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 11.2 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, ID =7A, RG = 10 | - | 20.5 | - | ns |
| tr | Turn-On Rise Time | - | 17 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 49.4 | - | ns | |
| tf | Turn-Off Fall Time | - | 21 | - | ns | |
| Qg | Total Gate Charge | VDS = 640V, ID =7A, VGS = 10V | - | 33.9 | - | nC |
| Qgs | Gate-Source Charge | - | 6.7 | - | nC | |
| Qgd | Gate-Drain Charge | - | 16.2 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 7 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 28 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 7A | - | - | 1.5 | V |
| trr | Reverse Recovery Time | IS=7A,Tj = 25 dIF/dt=100A/us, VGS=0V | - | 626 | - | ns |
| Qrr | Reverse Recovery Charge | - | 4.9 | - | uC | |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina