NIKO-SEM PE5E4BA N Channel Enhancement Mode Transistor with Low Conduction Losses and RoHS Compliance
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Product Description
Product Overview
The PE5E4BA is an N-Channel Enhancement Mode Field Effect Transistor from NIKO-SEM, designed for protection and logic/load switch circuits. It features low RDS(on) for minimal conduction losses and an optimized gate charge for reduced switching losses. This device is PbFree, Halogen Free, and RoHS compliant, making it suitable for environmentally conscious applications.
Product Attributes
- Brand: NIKO-SEM
- Product Name: PE5E4BA
- Type: N-Channel Enhancement Mode Field Effect Transistor
- Package: PDFN 3x3P
- Certifications: PbFree, Halogen Free, RoHS compliant
Technical Specifications
| Parameter | Symbol | Conditions | Limit | Unit |
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | ±25 | V | |
| Continuous Drain Current | ID | TC = 25 °C | 31 | A |
| Continuous Drain Current | ID | TC = 100 °C | 19 | A |
| Pulsed Drain Current | IDM | 90 | A | |
| Continuous Drain Current | ID | TA = 25 °C | 10 | A |
| Continuous Drain Current | ID | TA = 70 °C | 8 | A |
| Avalanche Current | IAS | 22 | A | |
| Avalanche Energy | EAS | L = 0.1mH | 24 | mJ |
| Power Dissipation | PD | TC = 25 °C | 18 | W |
| Power Dissipation | PD | TC = 100 °C | 7 | W |
| Power Dissipation | PD | TA = 25 °C | 1.7 | W |
| Power Dissipation | PD | TA = 70 °C | 1.1 | W |
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | °C | |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 30 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1.3 to 2.3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±25V | ±100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 24V, VGS = 0V | 1 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V, TJ = 55 °C | 10 | µA |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 8.8A | 14.3 to 17 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 10A | 7.5 to 9.5 | mΩ |
| Forward Transconductance | gfs | VDS = 5V, ID = 10A | 28 | S |
| Input Capacitance | Ciss | VGS = 0V, VDS = 15V, f = 1MHz | 530 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 15V, f = 1MHz | 160 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 15V, f = 1MHz | 90 | pF |
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | 2.7 | Ω |
| Total Gate Charge | Qg | VDS = 15V, VGS = 10V, ID = 10A | 12 | nC |
| Gate-Source Charge | Qgs | VDS = 15V, VGS = 10V, ID = 10A | 6.7 | nC |
| Gate-Drain Charge | Qgd | VDS = 15V, VGS = 10V, ID = 10A | 4.3 | nC |
| Turn-On Delay Time | td(on) | VDS = 15V, ID ≈ 10A, VGS = 10V, RGEN =6Ω | 18 | nS |
| Rise Time | tr | VDS = 15V, ID ≈ 10A, VGS = 10V, RGEN =6Ω | 16 | nS |
| Turn-Off Delay Time | td(off) | VDS = 15V, ID ≈ 10A, VGS = 10V, RGEN =6Ω | 35 | nS |
| Fall Time | tf | VDS = 15V, ID ≈ 10A, VGS = 10V, RGEN =6Ω | 17 | nS |
| Continuous Current | IS | 15 | A | |
| Forward Voltage | VSD | IF = 10A, VGS = 0V | 1.2 | V |
| Reverse Recovery Time | trr | IF = 10A, dlF/dt = 100A / µS | 15 | nS |
| Reverse Recovery Charge | Qrr | IF = 10A, dlF/dt = 100A / µS | 5 | nC |
| Junction-to-Ambient Thermal Resistance | RθJA | Steady-State | 70 | °C / W |
| Junction-to-Case Thermal Resistance | RθJC | Steady-State | 7 | °C / W |
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