Nexperia BC847 215 NPN Transistor in SOT23 Package Suitable for Amplification and Switching Circuits

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Product Description

Product Overview

The Nexperia BC847x series comprises NPN general-purpose transistors designed for versatile switching and amplification applications. These transistors are housed in compact SOT23 (TO-236AB) surface-mounted plastic packages, offering three distinct gain selections to accommodate various design requirements. With a collector-emitter voltage of 45 V and a collector current of 100 mA, they provide reliable performance for general-purpose electronic circuits.

Product Attributes

Brand: Nexperia
Package Type: SOT23 (TO-236AB)
Material: Plastic
Type: NPN General-Purpose Transistor

Technical Specifications

Model	Package Type	Collector-Emitter Voltage (VCEO)	Collector Current (IC)	DC Current Gain (hFE)	PNP Complement
BC847	SOT23 (TO-236AB)	45 V	100 mA	110 - 800	BC857
BC847A	SOT23 (TO-236AB)	45 V	100 mA	110 - 220	BC857A
BC847B	SOT23 (TO-236AB)	45 V	100 mA	200 - 450	BC857B
BC847C	SOT23 (TO-236AB)	45 V	100 mA	420 - 800	BC857C

Key Characteristics (Tamb = 25 C unless otherwise specified)

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VCEO	Collector-emitter voltage	Open base	-	-	45	V
IC	Collector current	-	-	-	100	mA
VCBO	Collector-base voltage	Open emitter	-	-	50	V
VEBO	Emitter-base voltage	Open collector	-	-	6	V
ICM	Peak collector current	Single pulse; tp 1 ms	-	-	200	mA
IBM	Peak base current	Single pulse; tp 1 ms	-	-	100	mA
Ptot	Total power dissipation	Tamb 25 C	-	-	250	mW
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-65	-	150	C
Tstg	Storage temperature	-	-65	-	150	C
V(BR)CES	Collector-emitter breakdown voltage	IC = 2 mA; VBE = 0 A	45	-	-	V
fT	Transition frequency	VCE = 5 V; IC = 10 mA; f = 100 MHz	100	-	-	MHz
Cc	Collector capacitance	VCB = 10 V; IE = ie = 0 A; f = 1 MHz	-	-	1.5	pF
Ce	Emitter capacitance	VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz	-	11	-	pF