P-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM PK5A7BA designed for power management

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Product Description

Product Overview

The PK5A7BA is a P-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various applications requiring efficient power switching. It features low RDS(on) to minimize conduction losses and an optimized gate charge for reduced switching losses. This device is Pb-Free, Halogen-Free, and RoHS compliant.

Product Attributes

Brand: NIKO-SEM
Product Name: PK5A7BA
Package Type: PDFN 5x6P
Certifications: PbFree, Halogen Free, RoHS compliant
Testing: 100% UIS Tested, 100% Rg Tested

Technical Specifications

Parameter	Symbol	Test Conditions	Limit	Unit
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage	VDS		-20	V
Gate-Source Voltage	VGS		±12	V
Continuous Drain Current	ID	TC = 25 °C	-108	A
Continuous Drain Current	TC = 100 °C	-68	A
Continuous Drain Current	ID	TA = 25 °C	-24	A
Continuous Drain Current	TA = 70 °C	-19	A
Pulsed Drain Current	IDM		-200	A
Avalanche Current	IAS	L = 0.1mH	-53	A
Avalanche Energy	EAS	L = 0.1mH	140	mJ
Power Dissipation	PD	TC = 25 °C	69	W
Power Dissipation	TC = 100 °C	27	W
Power Dissipation	PD	TA = 25 °C	3.5	W
Power Dissipation	TA = 70 °C	2.2	W
Operating Junction & Storage Temperature Range	Tj, Tstg		-55 to 150	°C
PRODUCT SUMMARY
Breakdown Voltage	V(BR)DSS		-20V
On-State Resistance	RDS(ON)		3.5mΩ
Continuous Drain Current	ID		-108	A
THERMAL RESISTANCE RATINGS
Junction-to-Ambient (t ≤ 10s)	RθJA		35	°C / W
Junction-to-Ambient (Steady-State)	RθJA		50	°C / W
Junction-to-Case (Steady-State)	RθJC		1.8	°C / W
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown Voltage	V(BR)DSS	VGS = 0V, ID = -250µA	-20	V
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = -250µA	-0.6	-1.1	V
Gate-Body Leakage	IGSS	VDS = 0V, VGS = ±12V	±100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = -16V, VGS = 0V	-1	µA
Zero Gate Voltage Drain Current	IDSS	VDS = -10V, VGS = 0V, TJ = 125 °C	-10	µA
Drain-Source On-State Resistance	RDS(ON)	VGS = -10V, ID = -20A	2.6	3.5	mΩ
		VGS = -4.5V, ID = -20A	3.1	4	mΩ
		VGS = -2.5V, ID = -20A	4.3	5.7	mΩ
Forward Transconductance	gfs	VDS = -5V, ID = -20A	50	S
Input Capacitance	Ciss	VGS = 0V, VDS = -10V, f = 1MHz	6383	pF
Output Capacitance	Coss	VGS = 0V, VDS = -10V, f = 1MHz	927	pF
Reverse Transfer Capacitance	Crss	VGS = 0V, VDS = -10V, f = 1MHz	793	pF
Gate Resistance	Rg	VGS = 0V, VDS = 0V, f = 1MHz	3	Ω
Total Gate Charge	Qg	VDS = -10V, VGS = -10V , ID = -20A	161	nC
Gate-Source Charge	Qgs	VDS = -10V, VGS = -10V , ID = -20A	6.3	nC
Gate-Drain Charge	Qgd	VDS = -10V, VGS = -10V , ID = -20A	21	nC
Turn-On Delay Time	td(on)	VDS = -10V, ID ≈ -20A, VGS = -10V, RGS = 6Ω	13	nS
Rise Time	tr	VDS = -10V, ID ≈ -20A, VGS = -10V, RGS = 6Ω	12	nS
Turn-Off Delay Time	td(off)	VDS = -10V, ID ≈ -20A, VGS = -10V, RGS = 6Ω	350	nS
Fall Time	tf	VDS = -10V, ID ≈ -20A, VGS = -10V, RGS = 6Ω	136	nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current	IS		-53	A
Forward Voltage	VSD	IF = -20A, VGS = 0V	-1.3	V
Reverse Recovery Time	trr	IF = -20A , dlF/dt = 100 A / μS	75	nS
Reverse Recovery Charge	Qrr	IF = -20A , dlF/dt = 100 A / μS	61	nC