Halogen Free Lead Free N Channel Enhancement Mode Transistor NIKO-SEM PK6A4BA with High Reliability
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Delivery Time:
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Product Description
Product Overview
The PK6A48BA is an N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers Halogen-Free & Lead-Free compliance, making it suitable for environmentally conscious designs.
Product Attributes
- Brand: NIKO-SEM
- Model: PK6A48BA
- Package: PDFN 5x6P
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 40 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current (TC = 25 °C) | ID | 37 | A | |
| Continuous Drain Current (TC = 100 °C) | ID | 30 | A | |
| Pulsed Drain Current | IDM | 100 | A | |
| Continuous Drain Current (TA = 25 °C) | ID | 14 | A | |
| Continuous Drain Current (TA = 70 °C) | ID | 11 | A | |
| Avalanche Current | IAS | 21 | A | |
| Avalanche Energy (L = 0.1mH) | EAS | 22 | mJ | |
| Power Dissipation (TC = 25 °C) | PD | 31 | W | |
| Power Dissipation (TC = 100 °C) | PD | 20 | W | |
| Power Dissipation (TA = 25 °C) | PD | 4 | W | |
| Power Dissipation (TA = 70 °C) | PD | 2.7 | W | |
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | °C | |
| THERMAL RESISTANCE RATINGS | ||||
| Junction-to-Ambient (Steady-State) | RθJA | 57 | °C / W | |
| Junction-to-Case (Steady-State) | RθJC | 4 | °C / W | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 40 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1.3 - 2.3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 32V, VGS = 0V | 1 | µA |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 10A | 10 - 14 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 14A | 8.6 - 10.5 | mΩ |
| Forward Transconductance | gfs | VDS = 5V, ID = 14A | 56 | S |
| Input Capacitance | Ciss | VGS = 0V, VDS = 20V, f = 1MHz | 937 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 20V, f = 1MHz | 118 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 20V, f = 1MHz | 72 | pF |
| Total Gate Charge | Qg | VDS = 20V, ID = 14A, VGS = 10V | 17.6 | nC |
| Gate-Source Charge | Qgs | VDS = 20V, ID = 14A, VGS = 10V | 9.3 | nC |
| Gate-Drain Charge | Qgd | VDS = 20V, ID = 14A, VGS = 10V | 4.7 | nC |
| Turn-On Delay Time | td(on) | VDS = 20V, ID ≈ 14A, VGS = 10V, RGEN =6Ω | 21 | nS |
| Rise Time | tr | VDS = 20V, ID ≈ 14A, VGS = 10V, RGEN =6Ω | 13 | nS |
| Turn-Off Delay Time | td(off) | VDS = 20V, ID ≈ 14A, VGS = 10V, RGEN =6Ω | 33 | nS |
| Fall Time | tf | VDS = 20V, ID ≈ 14A, VGS = 10V, RGEN =6Ω | 12 | nS |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||
| Continuous Current | IS | 23 | A | |
| Forward Voltage | VSD | IF = 14A, VGS = 0V | 1.3 | V |
| Reverse Recovery Time | trr | IF = 14A, dlF/dt = 100A / µS | 6.9 | nS |
| Reverse Recovery Charge | Qrr | IF = 14A, dlF/dt = 100A / µS | 1.1 | nC |
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