N Channel Logic Level Enhancement Mode MOSFET NIKO-SEM P45N02LDG with Lead Free TO252 DPAK Package
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Product Description
Product Overview
N-Channel Logic Level Enhancement Mode Field Effect Transistor P45N02LDG is designed for various applications requiring efficient switching and power control. It features a TO-252 (DPAK) package and lead-free construction, suitable for modern electronic designs.
Product Attributes
- Brand: NIKO-SEM
- Model: P45N02LDG
- Package: TO-252 (DPAK)
- Plating: Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typical | Max | Units |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC = 25 °C | 45 | A | ||
| Continuous Drain Current | ID | TC = 100 °C | 28 | A | ||
| Pulsed Drain Current | IDM | 140 | A | |||
| Avalanche Current | IAR | 20 | A | |||
| Avalanche Energy | EAS | L = 0.1mH | 140 | mJ | ||
| Repetitive Avalanche Energy | EAR | L = 0.05mH | 5.6 | mJ | ||
| Power Dissipation | PD | TC = 25 °C | 55 | W | ||
| Power Dissipation | PD | TC = 100 °C | 33 | W | ||
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 | 150 | °C | ||
| Lead Temperature | TL | 1/16” from case for 10 sec. | 275 | °C | ||
| THERMAL RESISTANCE RATINGS | ||||||
| Junction-to-Case | RθJC | 3 | °C / W | |||
| Junction-to-Ambient | RθJA | 70 | °C / W | |||
| Case-to-Heatsink | RθCS | 0.7 | °C / W | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 25 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 0.8 | 1.2 | 2.5 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±20V | ±250 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V | 25 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V, TJ = 125 °C | 250 | µA | ||
| On-State Drain Current | ID(ON) | VDS = 10V, VGS = 10V | 45 | A | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 7V, ID = 18A | 20 | 30 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 20A | 15 | 28 | mΩ | |
| Forward Transconductance | gfs | VDS = 15V, ID = 30A | 16 | S | ||
| Input Capacitance | Ciss | VGS = 0V, VDS = 15V, f = 1MHz | 600 | pF | ||
| Output Capacitance | Coss | VGS = 0V, VDS = 15V, f = 1MHz | 290 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 15V, f = 1MHz | 100 | pF | ||
| Total Gate Charge | Qg | VDS = 0.5V(BR)DSS, VGS = 10V, ID = 20A | 25 | nC | ||
| Gate-Source Charge | Qgs | VDS = 0.5V(BR)DSS, VGS = 10V, ID = 20A | 2.9 | nC | ||
| Gate-Drain Charge | Qgd | VDS = 0.5V(BR)DSS, VGS = 10V, ID = 20A | 7.0 | nC | ||
| Turn-On Delay Time | td(on) | ID ≅ 30A, VGS = 10V, RGS = 2.5Ω | 7.0 | nS | ||
| Rise Time | tr | ID ≅ 30A, VGS = 10V, RGS = 2.5Ω | 7.0 | nS | ||
| Turn-Off Delay Time | td(off) | ID ≅ 30A, VGS = 10V, RGS = 2.5Ω | 24 | nS | ||
| Fall Time | tf | ID ≅ 30A, VGS = 10V, RGS = 2.5Ω | 6.0 | nS | ||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Continuous Current | IS | 45 | A | |||
| Pulsed Current | ISM | 150 | A | |||
| Forward Voltage | VSD | IF = IS, VGS = 0V | 1.3 | V | ||
| Reverse Recovery Time | trr | IF = IS, dlF/dt = 100A / µS | 37 | nS | ||
| Peak Reverse Recovery Current | IRM(REC) | IF = IS, dlF/dt = 100A / µS | 200 | A | ||
| Reverse Recovery Charge | Qrr | IF = IS, dlF/dt = 100A / µS | 0.043 | µC | ||
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