Transistor N channel enhancement mode NIKO SEM PD632BA ideal for power switching electronic circuits

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Product Description

PD632BA - N-Channel Enhancement Mode Field Effect Transistor

The PD632BA is a N-Channel Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers high performance with a low on-state resistance and significant current handling capabilities. This transistor is suitable for power switching and amplification circuits.

Product Attributes

Brand: NIKO-SEM
Package: TO-252
Certifications: Halogen-Free & Lead-Free

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage	VDS				30	V
Gate-Source Voltage	VGS				±20	V
Continuous Drain Current	ID	TC = 25 °C			105	A
Continuous Drain Current	ID	TC = 100 °C			66	A
Pulsed Drain Current	IDM				200	A
Avalanche Current	IAS				40	A
Avalanche Energy	EAS	L = 0.1mH			80	mJ
Power Dissipation	PD	TC = 25 °C			73	W
Power Dissipation	PD	TC = 100 °C			29	W
Junction & Storage Temperature Range	TJ, Tstg		-55		150	°C
THERMAL RESISTANCE RATINGS
Junction-to-Case	RθJC			1.7		°C / W
Junction-to-Ambient	RθJA				62.5	°C / W
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown Voltage	V(BR)DSS	VGS = 0V, ID = 250µA	30			V
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250µA	1.3	1.7	2.3	V
Gate-Body Leakage	IGSS	VDS = 0V, VGS = ±20V			±100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = 24V, VGS = 0V			1	µA
Zero Gate Voltage Drain Current	IDSS	VDS = 20V, VGS = 0V, TJ = 125 °C			10	µA
Drain-Source On-State Resistance	RDS(ON)	VGS = 4.5V, ID = 30A		3.4	4.8	mΩ
Drain-Source On-State Resistance	RDS(ON)	VGS = 10V , ID = 40A		2.8	3.7	mΩ
Forward Transconductance	gfs	VDS = 5V, ID = 40A		70		S
Input Capacitance	Ciss	VGS = 0V, VDS = 15V, f = 1MHz		2189		pF
Output Capacitance	Coss	VGS = 0V, VDS = 15V, f = 1MHz		390		pF
Reverse Transfer Capacitance	Crss	VGS = 0V, VDS = 15V, f = 1MHz		234		pF
Gate Resistance	Rg	VGS = 0V, VDS = 0V, f = 1MHz		1.4		Ω
Total Gate Charge	Qg(VGS=10V)	VDS = 15V , ID = 20A		44.2		nC
Total Gate Charge	Qg(VGS=4.5V)	VDS = 15V , ID = 20A		23.1		nC
Gate-Source Charge	Qgs	VDS = 15V , ID = 20A		5.6		nC
Gate-Drain Charge	Qgd	VDS = 15V , ID = 20A		10.7		nC
Turn-On Delay Time	td(on)	VDS = 15V ID ≈ 20A, VGS = 10V, RGEN =6Ω		25		nS
Rise Time	tr	VDS = 15V ID ≈ 20A, VGS = 10V, RGEN =6Ω		15		nS
Turn-Off Delay Time	td(off)	VDS = 15V ID ≈ 20A, VGS = 10V, RGEN =6Ω		54		nS
Fall Time	tf	VDS = 15V ID ≈ 20A, VGS = 10V, RGEN =6Ω		17		nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current	IS				105	A
Forward Voltage	VSD	IF = 40A, VGS = 0V		1		V
Reverse Recovery Time	trr	IF = 20A, dlF/dt = 100A / µS		25		nS
Reverse Recovery Charge	Qrr	IF = 20A, dlF/dt = 100A / µS		11		nC