NIKO-SEM PK6A6BA PDFN 5x6P N-Channel Enhancement Mode Field Effect Transistor Designed for Power Switching
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Product Description
NIKO-SEM PK6A6BA PDFN 5x6P N-Channel Enhancement Mode Field Effect Transistor
The PK6A6BA is a high-performance N-Channel Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers a robust combination of low on-resistance and high current handling capabilities, making it suitable for power switching and amplification circuits. This transistor is Halogen-Free & Lead-Free, adhering to environmental standards.
Product Attributes
- Brand: NIKO-SEM
- Model: PK6A6BA
- Package: PDFN 5x6P
- Certifications: Halogen-Free & Lead-Free
- Channel Type: N-Channel
- Mode: Enhancement Mode
Technical Specifications
| Parameter | Symbol | Conditions | Limit | Units |
|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 40 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | TC = 25 °C | 42 | A |
| Continuous Drain Current | ID | TC = 100 °C | 26.6 | A |
| Pulsed Drain Current | IDM | 100 | A | |
| Continuous Drain Current | ID | TA = 25 °C | 11 | A |
| Continuous Drain Current | ID | TA = 70 °C | 9 | A |
| Avalanche Current | IAS | 33.7 | A | |
| Avalanche Energy | EAS | L = 0.1mH | 56.8 | mJ |
| Power Dissipation | PD | TC = 25 °C | 31 | W |
| Power Dissipation | PD | TC = 100 °C | 12.5 | W |
| Power Dissipation | PD | TA = 25 °C | 2.3 | W |
| Power Dissipation | PD | TA = 70 °C | 1.5 | W |
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | °C | |
| THERMAL RESISTANCE RATINGS | ||||
| Junction-to-Ambient | RθJA | 54 | °C / W | |
| Junction-to-Case | RθJC | 4 | °C / W | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 40 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1.3 - 2.3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 32V, VGS = 0V | 1 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 30V, VGS = 0V, TJ = 55 °C | 10 | µA |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 11A | 6.4 - 12 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 11A | 5.5 - 8 | mΩ |
| Forward Transconductance | gfs | VDS = 5V, ID = 11A | 55 | S |
| Input Capacitance | Ciss | VGS = 0V, VDS = 15V, f = 1MHz | 1672 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 15V, f = 1MHz | 206 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 15V, f = 1MHz | 124 | pF |
| Total Gate Charge | Qg | VDS = 15V, ID = 11A, VGS = 10V | 34 | nC |
| Gate-Source Charge | Qgs | VDS = 15V, ID = 11A, VGS = 10V | 5.1 | nC |
| Gate-Drain Charge | Qgd | VDS = 15V, ID = 11A, VGS = 10V | 8.3 | nC |
| Turn-On Delay Time | td(on) | VDS = 15V, ID ≈ 11A, VGS = 10V, RGEN = 6Ω | 25 | nS |
| Rise Time | tr | VDS = 15V, ID ≈ 11A, VGS = 10V, RGEN = 6Ω | 11 | nS |
| Turn-Off Delay Time | td(off) | VDS = 15V, ID ≈ 11A, VGS = 10V, RGEN = 6Ω | 41 | nS |
| Fall Time | tf | VDS = 15V, ID ≈ 11A, VGS = 10V, RGEN = 6Ω | 12 | nS |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||
| Continuous Current | IS | 24 | A | |
| Forward Voltage | VSD | IF = 11A, VGS = 0V | 1.3 | V |
| Reverse Recovery Time | trr | IF = 11A, dlF/dt = 100A / µS | 19.5 | nS |
| Reverse Recovery Charge | Qrr | IF = 11A, dlF/dt = 100A / µS | 9.4 | nC |
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