N Channel Logic Level Enhancement Mode FET with Halogen Free Lead Free Compliance NIKO-SEM PZD502CYB
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Product Description
Product Overview
The PZD502CYB is an N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various electronic applications. It features a SOT-523 package and is Halogen-Free & Lead-Free, indicating its compliance with environmental standards. This transistor offers ESD protection on the gate, ensuring robustness in handling and operation.
Product Attributes
- Brand: NIKO-SEM
- Package: SOT-523
- Certifications: Halogen-Free & Lead-Free
- Gate Protection: ESD Protected
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 20 | V | |
| Gate-Source Voltage | VGS | ±8 | V | |
| Continuous Drain Current | ID | TA = 25 °C | 0.7 | A |
| TA = 70 °C | 0.6 | A | ||
| Pulsed Drain Current | IDM | 1 | 2 | A |
| Power Dissipation | PD | TA = 25 °C | 0.4 | W |
| TA = 70 °C | 0.2 | W | ||
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | °C | |
| THERMAL RESISTANCE RATINGS | ||||
| Junction-to-Ambient | RθJA | 2 | 280 | °C/W |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 20 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 0.35 TYP 0.6 MAX 1 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±8V | ±30 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 16V, VGS = 0V | 1 | µA |
| VDS = 10V, VGS = 0V, TJ = 55 °C | 10 | µA | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 1.8V, ID = 0.35A | 384 TYP 850 MAX | mΩ |
| VGS = 2.5V, ID = 0.5A | 274 TYP 765 MAX | mΩ | ||
| VGS = 4.5V, ID = 0.6A | 213 TYP 450 MAX | mΩ | ||
| Forward Transconductance | gfs | VDS = 5V, ID =0.6A | 2 | S |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | Ciss | VGS = 0V, VDS = 10V, f = 1MHz | 38 | pF |
| Output Capacitance | Coss | 16 | pF | |
| Reverse Transfer Capacitance | Crss | 12 | pF | |
| Total Gate Charge | Qg | VDS = 10V, VGS = 4.5V, ID = 0.6A | 1.4 | nC |
| Gate-Source Charge | Qgs | 0.4 | nC | |
| Gate-Drain Charge | Qg d | 0.8 | nC | |
| Turn-On Delay Time | td(on) | 6 | nS | |
| Rise Time | tr | VDS =6V, ID ≅0.6 A, VGS = 4.5V, RGS = 6Ω | 18 | nS |
| Turn-Off Delay Time | td(off) | 30 | nS | |
| Fall Time | tf | 25 | nS | |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||
| Continuous Current | IS | 0.7 | A | |
| Forward Voltage | VSD | IF = 0.15A, VGS = 0V | 1.2 | V |
| Reverse Recovery Time | trr | VDS =12V, IF = 2A,dIF/dt = 100 A/µs | 233 | nS |
| Reverse Recovery Charge | Qrr | 630 | nC | |
| PRODUCT SUMMARY | ||||
| V(BR)DSS | 20V | |||
| RDS(ON) | 450mΩ | |||
| ID | 0.7A | |||
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