Durable cascode gan hemt device NITRIDE YHJ-65P080DA for motor drive and power supply systems

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Product Description

Product Overview

The YHJ-65P080DA is a normally-off Cascode GaN HEMT device designed for high-power applications. It offers high breakdown voltage, high current capability, and high operating speed, making it suitable for demanding power electronics systems. Its cascode configuration enhances performance and reliability.

Product Attributes

Brand: YHJ
Origin: Jiangxi Yuhongjin Chip Technology Co., Ltd.
Package Type: DFN 8x8 mm

Technical Specifications

Part Number	Description	VDSS (min.)	RDS(ON) (typ.)	QG (typ.)	Package	Gate Drive Voltage Compatibility	Applications
YHJ-65P080DA	Cascode GaN HEMT	650V	80m	12nC	DFN 8x8 mm	-20V to +20V	Switch Mode Power Supplies (SMPS), AC-DC/ DC-DC Converters, Motor Drives

Symbol	Parameter	Value	Unit	Conditions
VDSS	Drain-source voltage	650	V	VGS=0V
VGSS	Gate- source voltage	-20V ~ +20V	V
Ptot	Total power dissipation @TC = 25oC	119	W
ID	Drain current (continuous) at TC = 25C operation	25.5	A
ID	Drain current (continuous) at TC = 100C operation	16.1	A
IDM	Pulsed drain current (pulse width: 10s)	105	A
Tc	Operating temperature Case	-55 to +150	C
TJ	Junction	-55 to +150	C
TS	Storage temperature	-55 to +150	C
TSOLD	Soldering peak temperatureb	260	C	For 10 sec., 1.6mm from the case
RJA	Thermal resistance junction-ambient	64	C/W
RJC	Thermal resistance junction-case	1.05	C/W
VGS(th)	Gate threshold voltage	1.7 - 2.2	V	VDS= 10V ,ID=1mA
RDS(on)	Static drain-source on- resistance	- 80 - 95	m	VGS=6V, ID=5A, TJ=25oC
RDS(on)	Static drain-source on- resistance	- 180 -	m	VGS=6V, ID=5A, TJ=150oC
IDSS	Drain-source leakage current	- 2 - 10	A	VGS =0V, VDS =650V, TJ=25oC
IDSS	Drain-source leakage current	- 10 -	A	VGS =0V, VDS =650V, TJ=150oC
IGSS	Gate-to-source forward leakage current	- - 100	nA	VGS=20V
IGSS	Gate-to-source reverse leakage current	- - -100	nA	VGS=-20V
CISS	Input capacitance	910 -	pF	VGS=0V, VDS=400V, f=1MHz
COSS	Output capacitance	- 26.4 -	pF
CRSS	Reverse transfer capacitance	- 3.8 -	pF
QG	Gate charge	- 12 -	nC	VGS=0~10V, VDS=400V, IDS =5A
QGS	Gate-source charge	- 4.3 -	nC
QOSS	Output charge	- 36 -	nC	VGS=0V, VDS=0~400V
tD(on)	Turn-on delay time	- 13 -	ns	VDS=400V, VGS=0 to 10V, IDS=2A ,RG=25
tD(off)	Turn-off delay time	- 43 -	ns
QRR	Reverse recovery charge	- 15 -	nC	Is=5A, VDS =400V