Digital transistor onsemi SMUN5335DW1T1G with monolithic bias network designed to reduce component count
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Product Description
Product Overview
This series of digital transistors integrates a single transistor with a monolithic bias network, consisting of a base resistor and a base-emitter resistor. Designed to replace individual components and external resistor networks, these Bias Resistor Transistors (BRTs) simplify circuit design, reduce board space, and lower component count. They are suitable for applications requiring unique site and control change requirements, with S and NSV prefixes qualifying for AEC-Q101 and PPAP capabilities.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S and NSV prefixes)
- Compliance: Pb-Free, Halogen Free/BFR Free, RoHS Compliant
Technical Specifications
| Model | Package | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Collector Current (IC) - Continuous | Input Forward Voltage (VIN(fwd)) | Input Reverse Voltage (VIN(rev)) | R1 | R2 |
| DTC123JP/D, MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 | SOT-363, SOT-563, SOT-963 | 50 Vdc | 50 Vdc | 100 mAdc | 12 Vdc | 5 Vdc | 2.2 k | 47 k |
| Model | Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
| MUN5335DW1 (SOT-363) | Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc | VCB = 50 V, IE = 0 |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc | VCE = 50 V, IB = 0 | |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.2 | mAdc | VEB = 6.0 V, IC = 0 | |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc | IC = 10 A, IE = 0 | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc | Note 6, IC = 2.0 mA, IB = 0 | |
| DC Current Gain | hFE | 80 | 140 | - | - | Note 6, IC = 5.0 mA, VCE = 10 V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc | Note 6, IC = 10 mA, IB = 0.3 mA | |
| Input Voltage (Off) | Vi(off) | - | - | 0.6 | Vdc | VCE = 5.0 V, IC = 100 A | |
| Input Voltage (On) | Vi(on) | - | - | 0.8 | Vdc | VCE = 0.2 V, IC = 5.0 mA | |
| Input Resistor | R1 | 1.5 | 2.2 | 2.9 | k | ||
| NSBC123JPDXV6 (SOT-563) | Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc | VCB = 50 V, IE = 0 |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc | VCE = 50 V, IB = 0 | |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.2 | mAdc | VEB = 6.0 V, IC = 0 | |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc | IC = 10 A, IE = 0 | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc | Note 6, IC = 2.0 mA, IB = 0 | |
| DC Current Gain | hFE | 80 | 140 | - | - | Note 6, IC = 5.0 mA, VCE = 10 V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc | Note 6, IC = 10 mA, IB = 0.3 mA | |
| Input Voltage (Off) | Vi(off) | - | - | 0.6 | Vdc | VCE = 5.0 V, IC = 100 A | |
| Input Voltage (On) | Vi(on) | - | - | 0.8 | Vdc | VCE = 0.2 V, IC = 5.0 mA | |
| Input Resistor | R1 | 1.5 | 2.2 | 2.9 | k | ||
| NSBC123JPDP6 (SOT-963) | Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc | VCB = 50 V, IE = 0 |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc | VCE = 50 V, IB = 0 | |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.2 | mAdc | VEB = 6.0 V, IC = 0 | |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc | IC = 10 A, IE = 0 | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc | Note 6, IC = 2.0 mA, IB = 0 | |
| DC Current Gain | hFE | 80 | 140 | - | - | Note 6, IC = 5.0 mA, VCE = 10 V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc | Note 6, IC = 10 mA, IB = 0.3 mA | |
| Input Voltage (Off) | Vi(off) | - | - | 0.6 | Vdc | VCE = 5.0 V, IC = 100 A | |
| Input Voltage (On) | Vi(on) | - | - | 0.8 | Vdc | VCE = 0.2 V, IC = 5.0 mA | |
| Input Resistor | R1 | 1.5 | 2.2 | 2.9 | k |
| Package | Characteristic | Symbol | Max | Unit | Notes |
| MUN5335DW1 (SOT-363) | Total Device Dissipation (One Junction Heated) | PD | 187 | mW | TA = 25C, Note 1, 2 |
| Derate above 25C (One Junction Heated) | 1.5 | mW/C | Note 1, 2 | ||
| Thermal Resistance, Junction to Ambient (One Junction Heated) | RJA | 670 | C/W | Note 1, 2 | |
| Total Device Dissipation (Both Junctions Heated) | PD | 250 | mW | TA = 25C, Note 1, 2, 3 | |
| Derate above 25C (Both Junctions Heated) | 2.0 | mW/C | Note 1, 2, 3 | ||
| Thermal Resistance, Junction to Ambient (Both Junctions Heated) | RJA | 493 | C/W | Note 1, 2, 3 | |
| Thermal Resistance, Junction to Lead | RJL | 188 | C/W | Note 1, 2 | |
| Junction and Storage Temperature Range | TJ, Tstg | 150 | C | 55 to +150 | |
| Total Device Dissipation (One Junction Heated) | PD | 256 | mW | TA = 25C, Note 1, 2 | |
| Derate above 25C (One Junction Heated) | 2.0 | mW/C | Note 1, 2 | ||
| Thermal Resistance, Junction to Ambient (One Junction Heated) | RJA | 490 | C/W | Note 1, 2 | |
| Thermal Resistance, Junction to Lead | RJL | 208 | C/W | Note 1, 2 | |
| NSBC123JPDXV6 (SOT-563) | Total Device Dissipation (One Junction Heated) | PD | 357 | mW | TA = 25C, Note 1 |
| Derate above 25C (One Junction Heated) | 2.9 | mW/C | Note 1 | ||
| Thermal Resistance, Junction to Ambient (One Junction Heated) | RJA | 350 | C/W | Note 1 | |
| Total Device Dissipation (Both Junctions Heated) | PD | 500 | mW | TA = 25C, Note 1, 3 | |
| Derate above 25C (Both Junctions Heated) | 4.0 | mW/C | Note 1, 3 | ||
| Thermal Resistance, Junction to Ambient (Both Junctions Heated) | RJA | 250 | C/W | Note 1, 3 | |
| Junction and Storage Temperature Range | TJ, Tstg | 150 | C | 55 to +150 | |
| NSBC123JPDP6 (SOT-963) | Total Device Dissipation (One Junction Heated) | PD | 231 | mW | TA = 25C, Note 4, 5 |
| Derate above 25C (One Junction Heated) | 1.9 | mW/C | Note 4, 5 | ||
| Thermal Resistance, Junction to Ambient (One Junction Heated) | RJA | 540 | C/W | Note 4, 5 | |
| Total Device Dissipation (Both Junctions Heated) | PD | 339 | mW | TA = 25C, Note 4, 5, 3 | |
| Derate above 25C (Both Junctions Heated) | 2.7 | mW/C | Note 4, 5, 3 | ||
| Thermal Resistance, Junction to Ambient (Both Junctions Heated) | RJA | 369 | C/W | Note 4, 5, 3 | |
| Junction and Storage Temperature Range | TJ, Tstg | 150 | C | 55 to +150 | |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
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Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
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Sellina