Compact SOT363 Package NPN PNP Resistor Equipped Double Transistors Featuring Nexperia NHUMD9F Series
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Product Description
Nexperia NHUMD10/13/9 Series: 80 V, 100 mA NPN/PNP Resistor-Equipped Double Transistors
Product Overview
The Nexperia NHUMD10/13/9 series offers a family of NPN/PNP Resistor-Equipped Double Transistors (RET) in a compact SOT363 (SC-88) surface-mounted plastic package. These transistors feature a high breakdown voltage of 80 V and an output current capability of 100 mA. The integrated resistors simplify circuit design, reduce component count, and lower pick-and-place costs, making them a cost-effective alternative for digital applications and controlling IC inputs or switching loads. The series is AEC-Q101 qualified for automotive applications.
Product Attributes
- Brand: Nexperia
- Package Type: SOT363 (SC-88)
- Technology: NPN/PNP Resistor-Equipped Double Transistors (RET)
- Qualification: AEC-Q101
Technical Specifications
| Model | R1 (k) | R2 (k) | Collector-Emitter Voltage (VCEO) | Output Current (IO) | Collector-Base Breakdown Voltage (VCBO) | Emitter-Base Voltage (VEBO) | Input Voltage (VI) (NPN TR1) | Input Voltage (VI) (PNP TR2) | Total Power Dissipation (Ptot) (Device, Tamb 25 C) | Junction Temperature (Tj) | Storage Temperature (Tstg) | Thermal Resistance (Rth(j-a)) (Device, free air) | DC Current Gain (hFE) (VCE = 5 V, IC = 10 mA) | Collector-Emitter Saturation Voltage (VCEsat) (IC = 10 mA, IB = 0.5 mA) | Transition Frequency (fT) (TR1 NPN) | Transition Frequency (fT) (TR2 PNP) | Collector Capacitance (Cc) (TR1 NPN) | Collector Capacitance (Cc) (TR2 PNP) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NHUMD10 | 2.2 | 47 | 80 V | 100 mA | 80 V | 7 V | -7 to +20 V | -20 to +7 V | 350 mW | 150 C | -65 to 150 C | 358 K/W | 100 (min) | 100 mV (max) | 170 MHz | 150 MHz | 2.5 pF (typ) | 3 pF (typ) |
| NHUMD13 | 4.7 | 47 | 80 V | 100 mA | 80 V | 7 V | -7 to +30 V | -30 to +7 V | 350 mW | 150 C | -65 to 150 C | 358 K/W | 100 (min) | 100 mV (max) | 170 MHz | 150 MHz | 2.5 pF (typ) | 3 pF (typ) |
| NHUMD9 | 10 | 47 | 80 V | 100 mA | 80 V | 7 V | -7 to +40 V | -40 to +7 V | 350 mW | 150 C | -65 to 150 C | 358 K/W | 100 (min) | 100 mV (max) | 170 MHz | 150 MHz | 2.5 pF (typ) | 3 pF (typ) |
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