Nexperia PBSS4160T 215 NPN Transistor Low Collector Emitter Saturation Voltage 60 Volt 1 Amp SOT23
Nexperia PBSS4160T: 60 V, 1 A NPN Low VCEsat (BISS) Transistor
Product Overview
The Nexperia PBSS4160T is a high-performance NPN low VCEsat (BISS) transistor designed for demanding applications. Encased in a compact SOT23 plastic package, this transistor offers a low collector-emitter saturation voltage (VCEsat), high collector current capability (IC and ICM), and high efficiency, leading to reduced heat generation and smaller printed-circuit board footprints. Its robust design makes it suitable for power management tasks such as DC-to-DC conversion and supply line switching, as well as peripheral and inductive load driving in automotive, telecom infrastructure, and industrial segments.
Product Attributes
- Brand: Nexperia
- Transistor Type: NPN
- Package Type: SOT23
- Complementary PNP Transistor: PBSS5160T
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 60 | V |
| IC | Collector current | [1] | - | - | 1 | A |
| ICM | Peak collector current | or limited by Tj(max); tp = 1 ms | - | - | 2 | A |
| RCEsat | Collector-emitter saturation resistance | IC = 1 A; IB = 100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 200 | 250 | m |
| VCBO | Collector-base voltage | Open emitter | - | - | 80 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 5 | V |
| IB | Base current | - | - | 300 | mA | |
| IBM | Peak base current | tp 300 s; 0.02 | - | - | 1 | A |
| Ptot | Total power dissipation | Tamb 25 C [1][3] | - | - | 1.25 | W |
| Tj | Junction temperature | - | - | 150 | C | |
| Tamb | Ambient temperature | -65 | - | 150 | C | |
| Tstg | Storage temperature | -65 | - | 150 | C | |
| Rth(j-a) | Thermal resistance junction to ambient | in free air [1] | - | - | 465 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | [2] | - | - | 312 | K/W |
| ICBO | Collector-base cut-off current | VCB = 60 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICES | Collector-emitter cut-off current | VCE = 60 V; VBE = 0 V; Tamb = 25 C | - | - | 100 | nA |
| hFE | DC current gain | VCE = 5 V; IC = 1 mA; Tamb = 25 C | 250 | 400 | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 500 mA; IB = 50 mA; Tamb = 25 C | - | 110 | 140 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 1 A; IB = 50 mA; Tamb = 25 C | - | 0.95 | 1.1 | V |
| fT | Transition frequency | VCE = 10 V; IC = 50 mA; f = 100 MHz; Tamb = 25 C | 150 | 220 | - | MHz |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | 5.5 | 10 | pF |
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Pulsed; tp 10 ms; 0.02.
Applications
- Automotive 42 V power
- Telecom infrastructure
- Industrial
- Power management (DC-to-DC conversion, Supply line switching)
- Peripheral driver
- Driver in low supply voltage applications (e.g., lamps and LEDs)
- Inductive load driver (e.g., relays, buzzers and motors)
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