40 volt 1 amp PNP low VCEsat transistor Nexperia PBSS5140T 215 for switching and muting applications
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Product Description
Product Overview
The Nexperia PBSS5140T is a 40 V, 1 A PNP low VCEsat transistor designed for general-purpose switching and muting applications. It offers a low collector-emitter saturation voltage (VCEsat), high collector current capability (IC and ICM), and high collector current gain (hFE) at high IC, contributing to high efficiency through reduced heat generation. This transistor is AEC-Q101 qualified, making it suitable for automotive applications. Key applications include LCD backlighting, supply line switching circuits, and battery-driven equipment such as mobile phones, video cameras, and handheld devices.
Product Attributes
- Brand: Nexperia
- Type: PNP low VCEsat transistor
- Package Type: SOT23 (TO-236AB)
- Qualification: AEC-Q101 qualified
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | -40 | V |
| IC | Collector current | - | - | - | -1 | A |
| ICM | Peak collector current | Single pulse; tp 1 ms | - | - | -2 | A |
| RCEsat | Collector-emitter saturation resistance | IC = -500 mA; IB = -50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 300 | 500 | m |
| VCBO | Collector-base voltage | Open emitter | - | - | -40 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | -5 | V |
| IBM | Peak base current | Single pulse; tp 1 ms | - | - | -1 | A |
| Ptot | Total power dissipation | Tamb 25 C | - | - | 300 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient | In free air [1] | - | - | 417 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | In free air [2] | - | - | 278 | K/W |
| ICBO | Collector-base cut-off current | VCB = -40 V; IE = 0 A; Tamb = 25 C | - | - | -100 | nA |
| ICEO | Collector-emitter cut-off current (base open) | VCB = -40 V; IE = 0 A; Tj = 150 C | - | - | -50 | A |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A; Tamb = 25 C | - | - | -100 | nA |
| hFE | DC current gain | VCE = -5 V; IC = -1 mA; Tamb = 25 C | 300 | - | - | - |
| hFE | DC current gain | VCE = -5 V; IC = -100 mA; Tamb = 25 C | 300 | - | 800 | - |
| hFE | DC current gain | VCE = -5 V; IC = -500 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 250 | - | - | - |
| hFE | DC current gain | VCE = -5 V; IC = -1 A; pulsed; tp 300 s; 0.02; Tamb = 25 C | 160 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = -100 mA; IB = -1 mA; Tamb = 25 C | - | - | -200 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = -500 mA; IB = -50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | -250 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = -1 A; IB = -100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | -500 | mV |
| VBEsat | Base-emitter saturation voltage | IC = -1 A; IB = -50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | -1.1 | V |
| VBEon | Base-emitter turn-on voltage | VCE = -5 V; IC = -1 A; Tamb = 25 C | - | - | -1 | V |
| td | Delay time | - | - | 10 | - | ns |
| tr | Rise time | - | - | 31 | - | ns |
| ton | Turn-on time | - | - | 41 | - | ns |
| ts | Storage time | - | - | 195 | - | ns |
| tf | Fall time | - | - | 65 | - | ns |
| toff | Turn-off time | VCC = -10 V; IC = -0.5 A; IBon = -25 mA; IBoff = 25 mA; Tamb = 25 C | - | 260 | - | ns |
| fT | Transition frequency | VCE = -10 V; IC = -50 mA; f = 100 MHz; Tamb = 25 C | 150 | - | - | MHz |
| Cc | Collector capacitance | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 12 | pF |
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