NPN Transistor Nexperia PBSS4350TVL Featuring Low RCEsat and High Collector Current in SOT23 Package
Product Overview
The Nexperia PBSS4350T is an NPN low VCEsat transistor housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It offers a low collector-emitter saturation voltage (VCEsat) and corresponding low RCEsat, high collector current capability, and high collector current gain. These features contribute to improved efficiency through reduced heat generation. The PBSS4350T is suitable for power management applications, low and medium power DC/DC converters, supply line switching, battery chargers, and linear voltage regulation with low voltage drop-out (LDO).
Product Attributes
- Brand: Nexperia
- Package Type: SOT23 (TO-236AB)
- Transistor Type: NPN
- Complementary PNP Transistor: PBSS5350T
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V |
| IC | Collector current | - | - | - | 2 | A |
| ICM | Peak collector current | Single pulse; tp 1 ms | - | - | 5 | A |
| RCEsat | Collector-emitter saturation resistance | IC = 2 A; IB = 200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 100 | 130 | m |
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 5 | V |
| ICRM | Repetitive peak collector current | 0.25; tp 100 ms | - | - | 3 | A |
| IB | Base current | - | - | - | 0.5 | A |
| Ptot | Total power dissipation | Tamb 25 C | - | - | 1.2 | W |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient | [1] | - | 417 | - | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | [2] | - | 260 | - | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | [3] | - | 230 | - | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | [4] | - | 104 | - | K/W |
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 10 mA; IB = 0 A; pulsed; tp 300 s; 0.02; Tamb = 25 C | 50 | - | - | V |
| V(BR)EBO | Emitter-base breakdown voltage | (collector open) IE = 100 A; IC = 0 A; Tamb = 25 C | 5 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tj = 150 C | - | - | 50 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 100 | nA |
| VCEsat | Collector-emitter saturation voltage | VCE = 2 V; IC = 100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 300 | - | mV |
| VCEsat | Collector-emitter saturation voltage | VCE = 2 V; IC = 500 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 300 | - | mV |
| VCEsat | Collector-emitter saturation voltage | VCE = 2 V; IC = 1 A; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 300 | - | mV |
| VCEsat | Collector-emitter saturation voltage | VCE = 2 V; IC = 2 A; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 200 | - | mV |
| hFE | DC current gain | VCE = 2 V; IC = 3 A; pulsed; tp 300 s; 0.02; Tamb = 25 C | 100 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 500 mA; IB = 50 mA; Tamb = 25 C | - | - | 80 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 1 A; IB = 50 mA; Tamb = 25 C | - | - | 160 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 2 A; IB = 100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | 280 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 2 A; IB = 200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | 260 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 3 A; IB = 300 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | 370 | mV |
| RCEsat | Collector-emitter saturation resistance | IC = 2 A; IB = 100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | 1.1 | V |
| VBEsat | Base-emitter saturation voltage | IC = 3 A; IB = 300 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | 1.2 | V |
| VBEon | Base-emitter turn-on voltage | VCE = 2 V; IC = 1 A; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | 1.2 | V |
| fT | Transition frequency | VCE = 5 V; IC = 100 mA; f = 100 MHz; Tamb = 25 C | 100 | - | - | MHz |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 25 | pF |
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm.
[4] Operated under pulsed conditions: tp 100 ms; 0.25.
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