NPN Darlington Transistors Nexperia PMBTA13 215 Offering High DC Current Gain for Electronic Designs
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Product Description
Product Overview
The Nexperia PMBTA13 and PMBTA14 are NPN Darlington transistors designed for applications requiring high current and high DC current gain. These transistors feature a maximum collector current of 500 mA and a maximum voltage of 30 V, with a minimum DC current gain of 10,000. They are suitable for high input impedance preamplifier applications and are housed in a SOT23 plastic package. The PNP complement is the PMBTA64.
Product Attributes
- Brand: Nexperia
- Product Type: NPN Darlington Transistors
- Package Type: SOT23 Plastic Surface Mounted Package
- Complementary PNP Transistor: PMBTA64
- Marking Codes: PMBTA13 (*1M), PMBTA14 (*1N)
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Max. | Unit |
|---|---|---|---|---|---|
| Limiting Values (Note 1: Transistor mounted on an FR4 printed-circuit board) | |||||
| VCBO | Collector-base voltage | open emitter | - | 30 | V |
| VCES | Collector-emitter voltage | VBE = 0 | - | 30 | V |
| VEBO | Emitter-base voltage | open collector | - | 10 | V |
| IC | Collector current (DC) | - | - | 500 | mA |
| ICM | Peak collector current | - | - | 800 | mA |
| IB | Base current (DC) | - | - | 200 | mA |
| Ptot | Total power dissipation | Tamb ≤ 25 °C; note 1 | - | 250 | mW |
| Tstg | Storage temperature | - | -65 | +150 | °C |
| Tj | Junction temperature | - | - | 150 | °C |
| Tamb | Operating ambient temperature | - | -65 | +150 | °C |
| Thermal Characteristics (Note 1: Transistor mounted on an FR4 printed-circuit board) | |||||
| Rth(j-a) | Thermal resistance from junction to ambient | note 1 | - | 500 | K/W |
| Characteristics (Tj = 25 °C unless otherwise specified) | |||||
| ICBO | Collector cut-off current | IE = 0; VCB = 30 V | - | 100 | nA |
| IEBO | Emitter cut-off current | IC = 0; VEB = 10 V | - | 100 | nA |
| hFE | DC current gain | IC = 10 mA; VCE = 5 V; (see Fig.2) | PMBTA13: 5 000 | - | - |
| PMBTA14: 10 000 | - | ||||
| hFE | DC current gain | IC = 100 mA; VCE = 5 V; (see Fig.2) | PMBTA13: 10 000 | - | - |
| PMBTA14: 20 000 | - | ||||
| VCEsat | Collector-emitter saturation voltage | IC = 100 mA; IB = 0.1 mA | - | 1.5 | V |
| VBEon | Base-emitter on-state voltage | IC = 100 mA; VCE = 5 V | - | 1.4 | V |
| fT | Transition frequency | IC = 10 mA; VCE = 5 V; f = 100 MHz | 125 | - | MHz |
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