Nexperia BC817DPN 115 NPN PNP transistor general purpose double transistor in compact SOT457 package

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Product Description

Product Overview

The Nexperia BC817DPN is an NPN/PNP general-purpose double transistor housed in an SOT457 (SC-74) plastic package. Designed for general-purpose switching and amplification, it offers reduced component count and lower pick and place costs. This device is AEC-Q101 qualified, making it suitable for automotive applications.

Product Attributes

Brand: Nexperia
Product Type: NPN/PNP General Purpose Transistor
Package Type: SOT457 (SC-74)
Qualification: AEC-Q101 Qualified

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Per transistor; for the PNP transistor with negative polarity
VCEO	Collector-emitter voltage	Open base	-	-	45	V
IC	Collector current	-	-	-	500	mA
ICM	Peak collector current	Single pulse; tp 1 ms	-	-	1	A
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
hFE	DC current gain	VCE = 1 V; IC = 100 mA [1]	160	-	400	[1]
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
ICBO	Collector-base cut-off current	VCB = 20 V; IE = 0 A; Tamb = 25 C	-	-	100	nA
ICBO	Collector-base cut-off current	VCB = 20 V; IE = 0 A; Tj = 150 C	-	-	5	A
IEBO	Emitter-base cut-off current	VEB = 5 V; IC = 0 A; Tamb = 25 C	-	-	100	nA
hFE	DC current gain	VCE = 1 V; IC = 100 mA [1]	160	-	400	-
hFE	DC current gain	VCE = 1 V; IC = 500 mA; Tamb = 25 C [1]	40	-	-	-
VCEsat	Collector-emitter saturation voltage	IC = 500 mA; IB = 50 mA; Tamb = 25 C [1]	-	-	700	mV
VBE	Base-emitter voltage	VCE = 1 V; IC = 500 mA [1] [2]	-	-	1.2	V
NPN transistor
Cc	Collector capacitance	VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C	-	5	-	pF
fT	Transition frequency	VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C	100	-	-	MHz
PNP transistor
Cc	Collector capacitance	VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C	-	9	-	pF
fT	Transition frequency	VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C	80	-	-	MHz
Limiting values
VCBO	Collector-base voltage	Open emitter	-	-	50	V
VCEO	Collector-emitter voltage	Open base	-	-	45	V
VEBO	Emitter-base voltage	Open collector	-	-	5	V
IC	Collector current	-	-	-	500	mA
ICM	Peak collector current	-	-	-	1	A
IBM	Peak base current	Single pulse; tp 1 ms	-	-	200	mA
Ptot	Total power dissipation	Tamb 25 C [1]	-	-	370	mW
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-65	-	150	C
Tstg	Storage temperature	-	-65	-	150	C
Per device
Ptot	Total power dissipation	Tamb 25 C [1]	-	-	600	mW
Thermal characteristics
Rth(j-a)	Thermal resistance from junction to ambient	In free air [1]	-	-	208	K/W