Schottky Barrier Diode onsemi BAT54HT1G for High Speed Switching and Circuit Protection Applications

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Product Description

Product Overview

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. The miniature surface mount package is excellent for hand held and portable applications where space is limited.

Product Attributes

Brand: ON Semiconductor
Device Marking: JV
PbFree Package: Available

Technical Specifications

Characteristic	Symbol	Min	Typ	Max	Unit
Reverse Breakdown Voltage (IR = 10 A)	V(BR)R	30			Volts
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)	CT		7.6	10	pF
Reverse Leakage (VR = 25 V)	IR		0.5	2.0	Adc
Forward Voltage (IF = 0.1 mAdc)	VF		0.22	0.24	Vdc
Forward Voltage (IF = 30 mAdc)	VF		0.41	0.5	Vdc
Forward Voltage (IF = 100 mAdc)	VF		0.52	0.8	Vdc
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc)	trr			5.0	ns
Forward Voltage (IF = 1.0 mAdc)	VF		0.29	0.32	Vdc
Forward Voltage (IF = 10 mAdc)	VF		0.35	0.40	Vdc
Forward Current (DC)	IF			200	mAdc
Repetitive Peak Forward Current	IFRM			300	mAdc
NonRepetitive Peak Forward Current (t < 1.0 s)	IFSM			600	mAdc

Rating	Symbol	Value	Unit
Reverse Voltage	VR	30	V

Characteristic	Symbol	Max	Unit
Total Device Dissipation FR5 Board, (Note 1) TA = 25C	PD	200	mW
Derate above 25C		1.57	mW/C
Thermal Resistance, JunctiontoAmbient	R JA	635	C/W
Junction and Storage Temperature	TJ, Tstg	55 to150	C