NPN Transistor NH MMBT5551 Featuring Compact SOT23 Package and PbFree Material for General Purpose

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Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The MMBT5551 is an NPN transistor from Niuhang Specification Electronic Co. Ltd, featuring high current capacity in a compact SOT-23 package. It utilizes an epitaxial planar type construction and is available in a Pb-Free package. This transistor is suitable for general-purpose applications.

Product Attributes

Brand: Niuhang Specification Electronic Co. Ltd
Package: SOT-23
Certifications: Epoxy UL: 94V-0
Material: Pb-Free Package is available

Technical Specifications

Symbol	Characteristic	Test Condition	Min.	Typ.	Max.	Unit
V(BR)CBO	Collector-Base Breakdown Voltage	IC=100uA,IE=0	160	-	-	V
V(BR)CEO	Collector-Emitter Breakdown Voltage	IC=10mA,IB=0	-	-	160	V
V(BR)EBO	Emitter-Base Breakdown Voltage	IE=100A,IC=0	6	-	-	V
ICBO	Collector Cutoff Current	VCE=50V,IC=0	-	-	50	nA
IEBO	Emitter Cutoff Current	VCE=10V,IC=0	-	-	50	nA
HFE(1)	DC Current Gain	VCE=1V,IC=10mA	-	80	-	-
HFE(2)	DC Current Gain	VCE=1V,Ic=50mA	-	250	-	-
VCE(Sat)	Collector-Emitter Saturation Voltage	IC=50mA,IB=5mA	-	-	0.2	V
VBE(Sat)	Base-Emitter Saturation Voltage	IC=10mA,IB=1mA	-	-	0.7	V
FT	Transition Frequency	VCE=10V,IC=20mA ,f=100MHz	300	-	-	MHz

Dim.	Milimeters	Inches
A	2.800 - 3.040	0.1102 - 0.1197
B	1.200 - 1.400	0.0472 - 0.0551
C	0.890 - 1.110	0.0350 - 0.0437
D	0.370 - 0.500	0.0146 - 0.0197
G	1.780 - 2.040	0.0701 - 0.0803
H	0.013 - 0.100	0.0005 - 0.0039
J	0.085 - 0.177	0.0033 - 0.0070
K	0.350 - 0.690	0.0138 - 0.0272
L	0.890 - 1.020	0.0350 - 0.0402
S	2.100 - 2.640	0.0827 - 0.1039
V	0.450 - 0.600	0.0177 - 0.0236