General purpose transistor Nexperia PDTC115EM 315 NPN resistor equipped with built in bias resistors
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Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The PDTC115E series NPN resistor-equipped transistors from Nexperia are designed for general-purpose switching and amplification, inverter and interface circuits, and circuit drivers. These transistors feature built-in bias resistors (R1 = 100 k, R2 = 100 k), simplifying circuit design, reducing component count, and lowering pick and place costs.
Product Attributes
- Brand: Nexperia
- Type: NPN resistor-equipped transistors
- Origin: Made in Hong Kong, Malaysia, or China (depending on marking code)
Technical Specifications
| Model | Package | Marking Code | PNP Complement | VCEO (Max) | IO (DC) (Max) | R1 (Typ) | R2 (Typ) |
|---|---|---|---|---|---|---|---|
| PDTC115EE | SOT416 (SC-75) | 46 | PDTA115EE | -50 V | -20 mA | 100 k | 100 k |
| PDTC115EEF | SOT490 (SC-89) | 49 | PDTA115EEF | -50 V | -20 mA | 100 k | 100 k |
| PDTC115EK | SOT346 (SC-59) | 56 | PDTA115EK | -50 V | -20 mA | 100 k | 100 k |
| PDTC115EM | SOT883 (SC-101) | DV | PDTA115EM | -50 V | -20 mA | 100 k | 100 k |
| PDTC115ES | SOT54 (TO-92) | TC115E | PDTA115ES | -50 V | -20 mA | 100 k | 100 k |
| PDTC115ET | SOT23 | *44(1) | PDTA115ET | -50 V | -20 mA | 100 k | 100 k |
| PDTC115EU | SOT323 (SC-70) | *15(1) | PDTA115EU | -50 V | -20 mA | 100 k | 100 k |
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Collector-base voltage (VCBO) | Open emitter | - | - | -50 | V |
| Collector-emitter voltage (VCEO) | Open base | - | - | -50 | V |
| Emitter-base voltage (VEBO) | Open collector | - | - | -10 | V |
| Input voltage (VI) | Positive | - | - | +40 | V |
| Input voltage (VI) | Negative | - | - | -10 | V |
| Output current (DC) (IO) | - | - | - | 20 | mA |
| Peak collector current (ICM) | - | - | - | 100 | mA |
| Total power dissipation (Ptot) | Tamb 25 C (SOT54) | - | - | 500 | mW |
| Total power dissipation (Ptot) | Tamb 25 C (SOT23) | - | - | 250 | mW |
| Total power dissipation (Ptot) | Tamb 25 C (SOT346) | - | - | 250 | mW |
| Total power dissipation (Ptot) | Tamb 25 C (SOT323) | - | - | 200 | mW |
| Total power dissipation (Ptot) | Tamb 25 C (SOT416) | - | - | 150 | mW |
| Total power dissipation (Ptot) | Tamb 25 C (SOT883) | - | - | 250 | mW |
| Total power dissipation (Ptot) | Tamb 25 C (SOT490) | - | - | 250 | mW |
| Storage temperature (Tstg) | - | -65 | - | +150 | C |
| Junction temperature (Tj) | - | - | - | 150 | C |
| Operating ambient temperature (Tamb) | - | -65 | - | +150 | C |
| Collector-base cut-off current (ICBO) | VCB = 50 V; IE = 0 A | - | - | 100 | nA |
| Collector-emitter cut-off current (ICEO) | VCE = 30 V; IB = 0 A | - | - | 1 | A |
| Collector-emitter cut-off current (ICEO) | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 50 | A |
| Emitter-base cut-off current (IEBO) | VEB = 5 V; IC = 0 A | - | - | 50 | A |
| DC current gain (hFE) | VCE = 5 V; IC = 5 mA | 80 | - | - | - |
| Collector-emitter saturation voltage (VCEsat) | IC = 5 mA; IB = 0.25 mA | - | - | 150 | mV |
| Input-off voltage (Vi(off)) | IC = 100 A; VCE = 5 V | - | 1.1 | 0.5 | V |
| Input-on voltage (Vi(on)) | IC = 1 mA; VCE = 0.3 V | 3 | 1.5 | - | V |
| Input resistor (R1) | - | 70 | 100 | 130 | k |
| Collector capacitance (Cc) | IE = ie = 0 A; VCB = 10 V; f = 1 MHz | - | - | 2.5 | pF |
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