field stop igbt onsemi FGH40N60SFDTU 600 volt 40 amp offering performance in industrial applications
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Product Description
FGH40N60SFD - 600 V, 40 A Field Stop IGBT
The FGH40N60SFD is a 600 V, 40 A Field Stop IGBT from Fairchild Semiconductor, utilizing novel field stop technology. It offers an optimum performance for applications requiring low conduction and switching losses, such as solar inverters, UPS, welders, PFC, microwave ovens, and telecom systems. Key advantages include high current capability, low saturation voltage (VCE(sat) = 2.3 V @ IC = 40 A), high input impedance, and fast switching speeds. The device is RoHS compliant.
Product Attributes
- Brand: Fairchild Semiconductor
- Product Series: FGH40N60SFD
- Technology: Field Stop IGBT
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Collector to Emitter Voltage (VCES) | 600 | V | |||
| Gate to Emitter Voltage (VGES) | ±20 | ±30 | V | ||
| Collector Current @ TC = 25°C (IC) | 80 | A | |||
| Collector Current @ TC = 100°C (IC) | 40 | A | |||
| Pulsed Collector Current @ TC = 25°C (ICM) | (1) | 120 | A | ||
| Maximum Power Dissipation @ TC = 25°C (PD) | 290 | W | |||
| Maximum Power Dissipation @ TC = 100°C (PD) | 116 | W | |||
| Operating Junction Temperature (TJ) | -55 | +150 | °C | ||
| Storage Temperature Range (Tstg) | -55 | +150 | °C | ||
| Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds (TL) | 300 | °C | |||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to Case (RθJC(IGBT)) | - | 0.43 | °C/W | ||
| Thermal Resistance, Junction to Case (RθJC(Diode)) | - | 1.45 | °C/W | ||
| Thermal Resistance, Junction to Ambient (RθJA) | - | 40 | °C/W | ||
| Electrical Characteristics of the IGBT | |||||
| Collector to Emitter Breakdown Voltage (BVCES) | VGE = 0 V, IC = 250 μA | 600 | - | - | V |
| Temperature Coefficient of Breakdown Voltage (ΔBVCES / ΔTJ) | VGE = 0 V, IC = 250 μA | - | 0.6 | - | V/°C |
| Collector Cut-Off Current (ICES) | VCE = VCES, VGE = 0 V | - | - | 250 | μA |
| G-E Leakage Current (IGES) | VGE = VGES, VCE = 0 V | - | - | ±400 | nA |
| G-E Threshold Voltage (VGE(th)) | IC = 250 μA, VCE = VGE | 4.0 | 5.0 | 6.5 | V |
| Collector to Emitter Saturation Voltage (VCE(sat)) | IC = 40 A, VGE = 15 V | - | 2.3 | 2.9 | V |
| Collector to Emitter Saturation Voltage (VCE(sat)) | IC = 40 A, VGE = 15 V, TC = 125°C | - | 2.5 | - | V |
| Input Capacitance (Cies) | VCE = 30 V, VGE = 0 V, f = 1 MHz | - | 2110 | - | pF |
| Output Capacitance (Coes) | - | 200 | - | pF | |
| Reverse Transfer Capacitance (Cres) | - | 60 | - | pF | |
| Turn-On Delay Time (td(on)) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 25 | - | ns |
| Rise Time (tr) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 42 | - | ns |
| Turn-Off Delay Time (td(off)) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 115 | - | ns |
| Fall Time (tf) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 27 | 54 | ns |
| Turn-On Switching Loss (Eon) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 1.13 | - | mJ |
| Turn-Off Switching Loss (Eoff) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 0.31 | - | mJ |
| Total Switching Loss (Ets) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 1.44 | - | mJ |
| Turn-On Delay Time (td(on)) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 24 | - | ns |
| Rise Time (tr) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 43 | - | ns |
| Turn-Off Delay Time (td(off)) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 120 | - | ns |
| Fall Time (tf) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 30 | - | ns |
| Turn-On Switching Loss (Eon) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 1.14 | - | mJ |
| Turn-Off Switching Loss (Eoff) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 0.48 | - | mJ |
| Total Switching Loss (Ets) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 1.62 | - | mJ |
| Total Gate Charge (Qg) | VCE = 400 V, IC = 40 A, VGE = 15 V | - | 120 | - | nC |
| Gate to Emitter Charge (Qge) | VCE = 400 V, IC = 40 A, VGE = 15 V | - | 14 | - | nC |
| Gate to Collector Charge (Qgc) | VCE = 400 V, IC = 40 A, VGE = 15 V | - | 58 | - | nC |
| Electrical Characteristics of the Diode | |||||
| Diode Forward Voltage (VFM) | IF = 20 A, TC = 25°C | - | 1.95 | 2.6 | V |
| Diode Forward Voltage (VFM) | IF = 20 A, TC = 125°C | - | 1.85 | - | V |
| Diode Reverse Recovery Time (trr) | IF=20 A, diF/dt = 200 A/μs, TC = 25°C | - | 45 | - | ns |
| Diode Reverse Recovery Time (trr) | IF=20 A, diF/dt = 200 A/μs, TC = 125°C | - | 140 | - | ns |
| Diode Reverse Recovery Charge (Qrr) | IF=20 A, TC = 25°C | - | 75 | - | nC |
| Diode Reverse Recovery Charge (Qrr) | IF=20 A, TC = 125°C | - | 375 | - | nC |
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