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Trench Technology onsemi FGY75T120SQDN Ultra Field Stop IGBT for High Power Switching Applications

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The FGY75T120SQDN is an Ultra Field Stop IGBT featuring a robust and cost-effective Trench construction. It offers superior performance in demanding switching applications with low on-state voltage and minimal switching loss. This IGBT is well-suited for UPS and solar applications and incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage.

Product Attributes

  • Brand: ON Semiconductor
  • Certifications: RoHS Compliant

Technical Specifications

ParameterSymbolValueUnitConditions
IGBT CharacteristicsVCES1200V
VGES±20V
IC (TC=25°C)150A
IC (TC=100°C)75A
ILM(1)300ATC=25°C, Pulsed
PD (TC=25°C)790W
TJ-55 to +175°COperating Junction Temperature
Diode CharacteristicsIF (TC=25°C)150A
IF (TC=100°C)75A
IFM300APulsed Max. Forward Current
VFM (IF=75 A, TC=25°C)-3.4 to 4V
Thermal CharacteristicsRJC (IGBT)0.19°C/WMax.
RJC (Diode)0.38°C/WMax.
RJA40°C/WMax.
Electrical Characteristics (IGBT, TC=25°C)BVCES1200VVGE=0V, IC=500µA
ICES-400µAVCE=VCES, VGE=0V
VGE(th)4.5 to 6.5VIC=400µA, VCE=VGE
VCE(sat) (IC=75 A, VGE=15 V)-1.7 to 1.95V
Switching Characteristics (IGBT, TC=25°C)td(on)-64nsVCC=600V, IC=75A, RG=10Ω, VGE=15V, Inductive Load
tr-96ns
td(off)-332ns
tf-28ns
Eon-6.25mJ
Eoff-1.96mJ
Electrical Characteristics (Diode, TC=25°C)trr (IF=75 A, dIF/dt=500 A/µs)-99nsVR=600V
Qrr-1001nC
Irrm-20A

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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