power transistor onsemi HGTD1N120BNS9A for switching applications in AC DC motor and relay driver systems
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Product Description
Product Overview
The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs, combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. These devices are ideal for high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies, and drivers for solenoids and relays. Formerly Developmental Type TA49316.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Origin: United States and/or other countries
- Certifications: Not specified in the provided text.
Technical Specifications
| Part Number | Package | Brand | Collector to Emitter Voltage (V) | Collector Current Continuous (A at TC=25C) | Gate to Emitter Voltage (V) | Power Dissipation (W at TC=25C) | Thermal Resistance Junction To Case (C/W) |
| HGTD1N120BNS | TO-252AA | 1N120B | 1200 | 5.3 | 20 | 60 | 2.1 |
| HGTP1N120BN | TO-220AB | 1N120BN | 1200 | 5.3 | 20 | 60 | 2.1 |
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