1200V IGBT onsemi NGTB40N120FL2WG Featuring Co Packaged Free Wheeling Diode and High Speed Switching
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Product Description
NGTB40N120FL2W/D, NGTB40N120FL2WG - IGBT Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost-effective Field Stop II Trench construction, offering superior performance in demanding switching applications with low on-state voltage and minimal switching loss. It is well-suited for UPS and solar applications and incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage. The device is optimized for high-speed switching and has a 10 s short-circuit capability.
Product Attributes
- Brand: onsemi
- Certifications: PbFree Devices
Technical Specifications
| Rating | Symbol | Value | Unit | Notes |
| Collectoremitter voltage | VCES | 1200 | V | |
| Collector current @ TC = 25C | IC | 80 | A | |
| Collector current @ TC = 100C | IC | 40 | A | |
| Pulsed collector current, Tpulse limited by TJmax | ICM | 200 | A | |
| Diode forward current @ TC = 25C | IF | 80 | A | |
| Diode forward current @ TC = 100C | IF | 40 | A | |
| Diode pulsed current, Tpulse limited by TJmax | IFM | 200 | A | |
| Gateemitter voltage | VGE | 20 | V | |
| Transient gateemitter voltage (Tpulse = 5 s, D < 0.10) | VGE | 30 | V | |
| Power Dissipation @ TC = 25C | PD | 535 | W | |
| Power Dissipation @ TC = 100C | PD | 267 | W | |
| Short Circuit Withstand Time (VGE = 15 V, VCE = 500 V, TJ 150C) | TSC | 10 | s | |
| Operating junction temperature range | TJ | 55 to +175 | C | |
| Storage temperature range | Tstg | 55 to +175 | C | |
| Lead temperature for soldering, 1/8 from case for 5 seconds | TSLD | 260 | C | |
| Thermal resistance junctiontocase, for IGBT | R JC | 0.28 | C/W | |
| Thermal resistance junctiontocase, for Diode | R JC | 0.5 | C/W | |
| Thermal resistance junctiontoambient | R JA | 40 | C/W | |
| Collectoremitter breakdown voltage, gateemitter shortcircuited (VGE = 0 V, IC = 500 A) | V(BR)CES | 1200 | V | |
| Collectoremitter saturation voltage (VGE = 15 V, IC = 40 A) | VCEsat | 2.00 | V | TJ = 25C |
| Collectoremitter saturation voltage (VGE = 15 V, IC = 40 A) | VCEsat | 2.40 | V | TJ = 175C |
| Gateemitter threshold voltage (VGE = VCE, IC = 400 A) | VGE(th) | 4.5 - 6.5 | V | Typ = 5.5 |
| Collectoremitter cutoff current, gateemitter shortcircuited (VGE = 0 V, VCE = 1200 V) | ICES | 0.1 | mA | TJ = 175C |
| Gate leakage current, collectoremitter shortcircuited (VGE = 20 V, VCE = 0 V) | IGES | 200 | nA | |
| Input capacitance (VCE = 20 V, VGE = 0 V, f = 1 MHz) | Cies | 7385 | pF | Typ |
| Output capacitance (VCE = 20 V, VGE = 0 V, f = 1 MHz) | Coes | 230 | pF | Typ |
| Reverse transfer capacitance (VCE = 20 V, VGE = 0 V, f = 1 MHz) | Cres | 140 | pF | Typ |
| Gate charge total (VCE = 600 V, IC = 40 A, VGE = 15 V) | Qg | 313 | nC | Typ |
| Gate to emitter charge (VCE = 600 V, IC = 40 A, VGE = 15 V) | Qge | 61 | nC | Typ |
| Gate to collector charge (VCE = 600 V, IC = 40 A, VGE = 15 V) | Qgc | 151 | nC | Typ |
| Turnon delay time (TJ = 25C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | td(on) | 116 | ns | Typ |
| Rise time (TJ = 25C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | tr | 42 | ns | Typ |
| Turnoff delay time (TJ = 25C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | td(off) | 286 | ns | Typ |
| Fall time (TJ = 25C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | tf | 121 | ns | Typ |
| Turnon switching loss (TJ = 25C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | Eon | 3.4 | mJ | Typ |
| Turnoff switching loss (TJ = 25C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | Eoff | 1.1 | mJ | Typ |
| Total switching loss (TJ = 25C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | Ets | 4.5 | mJ | Typ |
| Turnon delay time (TJ = 175C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | td(on) | 111 | ns | Typ |
| Rise time (TJ = 175C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | tr | 43 | ns | Typ |
| Turnoff delay time (TJ = 175C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | td(off) | 304 | ns | Typ |
| Fall time (TJ = 175C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | tf | 260 | ns | Typ |
| Turnon switching loss (TJ = 175C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | Eon | 4.4 | mJ | Typ |
| Turnoff switching loss (TJ = 175C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | Eoff | 2.5 | mJ | Typ |
| Total switching loss (TJ = 175C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | Ets | 6.9 | mJ | Typ |
| Forward voltage (VGE = 0 V, IF = 40 A) | VF | 2.00 | V | TJ = 25C, Typ |
| Forward voltage (VGE = 0 V, IF = 50 A) | VF | 2.30 | V | TJ = 175C, Typ |
| Forward voltage (VGE = 0 V, IF = 80 A) | VF | 2.60 | V | TJ = 175C, Typ |
| Reverse recovery time (TJ = 25C, IF = 40 A, VR = 400 V, diF/dt = 200 A/s) | trr | 240 | ns | Typ |
| Reverse recovery charge (TJ = 25C, IF = 40 A, VR = 400 V, diF/dt = 200 A/s) | Qrr | 2.5 | C | Typ |
| Reverse recovery current (TJ = 25C, IF = 40 A, VR = 400 V, diF/dt = 200 A/s) | Irrm | 18 | A | Typ |
| Reverse recovery time (TJ = 175C, IF = 40 A, VR = 400 V, diF/dt = 200 A/s) | trr | 392 | ns | Typ |
| Reverse recovery charge (TJ = 175C, IF = 40 A, VR = 400 V, diF/dt = 200 A/s) | Qrr | 5.36 | C | Typ |
| Reverse recovery current (TJ = 175C, IF = 40 A, VR = 400 V, diF/dt = 200 A/s) | Irrm | 25.80 | A | Typ |
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