Field Stop Trench IGBT onsemi FGH75T65SHD-F155 650 Volt 75 Amp suitable for UPS and ESS systems
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Product Description
Product Overview
The FGH75T65SHD is a 650 V, 75 A Field Stop Trench IGBT from ON Semiconductor, leveraging novel field stop IGBT technology for optimal performance in demanding applications. It offers a positive temperature coefficient for easy parallel operation, high current capability, and low saturation voltage. This IGBT is designed for applications requiring low conduction and switching losses, including solar inverters, UPS, welders, telecom, ESS, and PFC systems.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Certifications: RoHS Compliant
Technical Specifications
| Part Number | Description | Absolute Maximum Ratings | Thermal Characteristics | Electrical Characteristics (IGBT) | Electrical Characteristics (Diode) |
| FGH75T65SHD | 650 V, 75 A Field Stop Trench IGBT | VCES: 650 V, VGES: 20 V, IC (TC=25C): 150 A, IC (TC=100C): 75 A, PD (TC=25C): 455 W, TJ: -55 to +175 C | RJC(IGBT): 0.33 C/W, RJC(Diode): 0.65 C/W, RJA: 40 C/W | BVCES: 650 V, ICES: 250 A, IGES: 400 nA, VGE(th): 4.0 - 7.5 V, VCE(sat) (IC=75 A, VGE=15 V): 1.6 V (Typ.) | VFM (IF=50 A, TC=25C): 2.2 V (Typ.) |
| Features: | Cies: 3680 pF (Typ.), Coes: 179 pF (Typ.), Cres: 43 pF (Typ.) | Erec (IF=50 A, dIF/dt=200 A/s, TC=175C): 60 uJ (Typ.) | |||
| trr (TC=25C): 43.4 ns (Typ.) | |||||
| Qrr (TC=25C): 87.9 nC (Typ.) |
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