1200 Volt 40 Amp Field Stop Trench IGBT onsemi FGY40T120SMD ideal for UPS and power factor correction
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Product Description
ON Semiconductor FGY40T120SMD - 1200 V, 40 A Field Stop Trench IGBT
The FGY40T120SMD is a Field Stop Trench IGBT from ON Semiconductor, utilizing innovative FS Trench technology for optimal performance in hard switching applications. It offers a positive temperature coefficient, high speed switching, and low saturation voltage, making it suitable for solar inverters, UPS, welders, and PFC applications.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Technology: FS Trench Technology
- Certifications: RoHS Compliant
Technical Specifications
| Symbol | Description | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VCES | Collector to Emitter Voltage | 1200 | V | |||
| VGES | Gate to Emitter Voltage | ±25 | V | |||
| ILM (1) | Clamped Inductive Load Current @ TC = 25oC | 160 | A | |||
| ICM (2) | Pulsed Collector Current | 160 | A | |||
| IF | Diode Continuous Forward Current @ TC = 25oC | 80 | A | |||
| IFM | Diode Maximum Forward Current | 240 | A | |||
| PD | Maximum Power Dissipation @ TC = 25oC | 882 | W | |||
| TJ | Operating Junction Temperature | -55 | +175 | oC | ||
| Tstg | Storage Temperature Range | -55 | +175 | oC | ||
| Thermal Characteristics | ||||||
| RJC(IGBT) | Thermal Resistance, Junction to Case | -- | 0.17 | oC/W | ||
| RJC(Diode) | Thermal Resistance, Junction to Case | -- | 0.55 | oC/W | ||
| RJA | Thermal Resistance, Junction to Ambient | -- | 40 | oC/W | ||
| Electrical Characteristics of the IGBT | ||||||
| BVCES | Collector to Emitter Breakdown Voltage | VGE = 0 V, IC = 250 uA | 1200 | - | - | V |
| ICES | Collector Cut-Off Current | VCES = VCES, VGE = 0 V | - | - | 250 | uA |
| IGES | G-E Leakage Current | VGE = VGES, VCE = 0 V | - | - | ±400 | nA |
| VGE(th) | G-E Threshold Voltage | IC = 40 mA, VCE = VGE | 4.9 | 6.2 | 7.5 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 40 A, VGE = 15 V, TC = 25oC | - | 1.8 | 2.4 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 40 A, VGE = 15 V, TC = 175oC | - | 2.0 | - | V |
| Cies | Input Capacitance | VCE = 30 V, VGE = 0 V, f = 1MHz | - | 4300 | - | pF |
| Coes | Output Capacitance | - | 180 | - | pF | |
| Cres | Reverse Transfer Capacitance | - | 100 | - | pF | |
| td(on) | Turn-On Delay Time | VCC = 600 V, IC = 40 A, RG = 10 , VGE = 15 V, Inductive Load, TC = 25oC | - | 40 | - | ns |
| tr | Rise Time | - | 47 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 475 | - | ns | |
| tf | Fall Time | - | 10 | - | ns | |
| Eon | Turn-On Switching Loss | - | 2.7 | - | mJ | |
| Eoff | Turn-Off Switching Loss | - | 1.1 | - | mJ | |
| Ets | Total Switching Loss | - | 3.8 | - | mJ | |
| Qg | Total Gate Charge | VCE = 600 V, IC = 40 A, VGE = 15 V | - | 370 | - | nC |
| Qge | Gate to Emitter Charge | - | 23 | - | nC | |
| Qgc | Gate to Collector Charge | - | 210 | - | nC | |
| Electrical Characteristics of the DIODE | ||||||
| VFM | Diode Forward Voltage | IF = 40 A, TC = 25oC | - | 3.8 | 4.8 | V |
| VFM | Diode Forward Voltage | IF = 40 A, TC = 175oC | - | 2.7 | - | V |
| trr | Diode Reverse Recovery Time | VR = 600 V, IF = 40 A, diF/dt = 200 A/us, TC = 25oC | - | 65 | - | ns |
| Qrr | Diode Reverse Recovery Charge | - | 234 | - | nC | |
| Erec | Reverse Recovery Energy | VR = 600 V, IF = 40 A, diF/dt = 200 A/us, TC = 175oC | - | 97 | - | uJ |
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