power transistor onsemi FGHL75T65MQDTL4 650 volt 75 amp field stop trench IGBT for power electronics
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Product Description
Product Overview
The FGHL75T65MQDTL4 is a 650 V, 75 A Field Stop Trench IGBT featuring 4th generation mid-speed IGBT technology with full current-rated copack diode. It offers a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, and low saturation voltage. Optimized for smooth and efficient switching, this device is suitable for applications such as solar inverters, UPS, ESS, and PFC converters.
Product Attributes
- Brand: onsemi
- Certifications: RoHS Compliant
Technical Specifications
| Rating | Symbol | Value | Unit | Conditions |
| Collector to Emitter Voltage | VCES | 650 | V | |
| Gate to Emitter Voltage | VGES | 20 | V | |
| Transient Gate to Emitter Voltage | 30 | V | ||
| Collector Current | IC | 80 / 75 | A | @ TC = 25C / 100C (Note 1) |
| Pulsed Collector Current | ILM | 300 | A | (Note 2) |
| Pulsed Collector Current | ICM | 300 | A | (Note 3) |
| Diode Forward Current | IF | 80 / 75 | A | @ TC = 25C / 100C (Note 1) |
| Pulsed Diode Maximum Forward Current | IFM | 300 | A | |
| Maximum Power Dissipation | PD | 375 / 188 | W | @ TC = 25C / 100C |
| Operating Junction and Storage Temperature Range | TJ, TSTG | 55 to +175 | C | |
| Maximum Lead Temp. for Soldering Purposes | TL | 260 | C | (1/8 from Case for 5 s) |
| Collector-emitter Breakdown Voltage | BVCES | 650 | V | VGE = 0 V, IC = 1 mA |
| Temperature Coefficient of Breakdown Voltage | BVCES/TJ | 0.6 | V/C | VGE = 0 V, IC = 1 mA |
| Collector-emitter Cut-off Current | ICES | 250 A | VGE = 0 V, VCE = 650 V | |
| Gate Leakage Current | IGES | 400 nA | VGE = 20 V, VCE = 0 V | |
| Gate-emitter Threshold Voltage | VGE(th) | 3.0 / 4.5 / 6.0 | V | VGE = VCE, IC = 75 mA |
| Collector-emitter Saturation Voltage | VCE(sat) | 1.45 / 1.65 | V | VGE = 15 V, IC = 75 A, TJ = 25C / 175C |
| Input Capacitance | Cies | 4954 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Output Capacitance | Coes | 163 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Reverse Transfer Capacitance | Cres | 14 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Gate Charge Total | Qg | 149 | nC | VCE = 400 V, IC = 75 A, VGE = 15 V |
| Gate-to-emitter Charge | Qge | 27 | nC | VCE = 400 V, IC = 75 A, VGE = 15 V |
| Gate-to-collector Charge | Qgc | 34 | nC | VCE = 400 V, IC = 75 A, VGE = 15 V |
| Turn-on Delay Time | td(on) | 30 / 32 / 27 / 30 | ns | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Rise Time | tr | 16 / 29 / 19 / 32 | ns | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Turn-off Delay Time | td(off) | 190 / 181 / 206 / 198 | ns | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Fall Time | tf | 35 / 32 / 44 / 40 | ns | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Turn-on Switching Loss | Eon | 0.6 / 1.2 / 1.9 / 2.0 | mJ | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Turn-off Switching Loss | Eoff | 0.5 / 1.1 / 1.8 / 1.4 | mJ | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Total Switching Loss | Ets | 1.1 / 2.3 / 1.8 / 3.4 | mJ | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Diode Forward Voltage | VFM | 1.65 / 1.55 | V | IF = 75 A, TJ = 25C / 175C |
| Reverse Recovery Energy | EREC | 105 / 235 / 747 / 865 | J | TC = 25C, VCE = 400 V, IF = 37.5 A / 75 A, dIF/dt = 1000 A/s; TC = 150C, VCE = 400 V, IF = 37.5 A / 75 A, dIF/dt = 1000 A/s |
| Diode Reverse Recovery Time | Trr | 58 / 107 / 151 / 171 | ns | TC = 25C, VCE = 400 V, IF = 37.5 A / 75 A, dIF/dt = 1000 A/s; TC = 150C, VCE = 400 V, IF = 37.5 A / 75 A, dIF/dt = 1000 A/s |
| Diode Reverse Recovery Charge | Qrr | 591 / 1113 / 2780 / 3286 | nC | TC = 25C, VCE = 400 V, IF = 37.5 A / 75 A, dIF/dt = 1000 A/s; TC = 150C, VCE = 400 V, IF = 37.5 A / 75 A, dIF/dt = 1000 A/s |
| Thermal Resistance Junction-to-case (IGBT) | R JC | 0.40 | C/W | |
| Thermal Resistance Junction-to-case (Diode) | R JC | 0.60 | C/W | |
| Thermal Resistance Junction-to-ambient | R JA | 40 | C/W |
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Sellina