N-Channel Ignition IGBT onsemi ISL9V5045S3ST-F085 with 480V voltage and 51A current in D2-Pak package
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Product Description
ON Semiconductor ISL9V5045S3ST_F085 N-Channel Ignition IGBT
The ON Semiconductor ISL9V5045S3ST_F085 is a next-generation ignition IGBT designed for automotive ignition circuits, specifically as a coil driver. It offers outstanding SCIS (Self-Clamped Inductive Switching) capability in the industry-standard D2-Pak (TO-263) plastic package. Internal diodes provide voltage clamping without external components, and devices can be custom-made to specific clamp voltages.
Product Attributes
- Brand: ON Semiconductor
- Origin: Fairchild Semiconductor integration
- Certifications: AEC Q101 Qualified, RoHS Compliant
- Trademarks: ON Semiconductor, EcoSPARK
Technical Specifications
| Part Number | Description | SCIS Energy (25C) | Voltage (BVCER) | Current (IC25) | Gate Drive | Package |
| ISL9V5045S3ST_F085 | N-Channel Ignition IGBT | 500mJ | 480V | 51A | Logic Level | D2-Pak (TO-263AB) |
| ISL9V5045S3 | N-Channel Ignition IGBT | N/A | N/A | N/A | N/A | TO-262AA |
| ISL9V5045S3S | N-Channel Ignition IGBT | N/A | N/A | N/A | N/A | D2-Pak (TO-263AB) |
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| BVCER | Collector to Emitter Breakdown Voltage | IC = 2mA, VGE = 0, RG = 1K | 420 | 450 | 480 | V |
| BVECS | Emitter to Collector Breakdown Voltage | IC = -75mA, VGE = 0V, TC = 25C | 30 | - | - | V |
| VCE(SAT) | Collector to Emitter Saturation Voltage | IC = 10A, VGE = 4.0V, TC = 25C | - | 1.25 | 1.60 | V |
| QG(ON) | Gate Charge | IC = 10A, VCE = 12V, VGE = 5V | - | 32 | - | nC |
| VGE(TH) | Gate to Emitter Threshold Voltage | IC = 1.0mA, VCE = VGE, TC = 25C | 1.3 | - | 2.2 | V |
| td(ON)R | Current Turn-On Delay Time-Resistive | VCE = 14V, RL = 1, VGE = 5V, RG = 1K, TJ = 25C | - | 0.7 | 4 | s |
| tfL | Current Fall Time-Inductive | VCE = 300V, L = 2mH, VGE = 5V, RG = 1K, TJ = 25C | - | 2.8 | 15 | s |
| RJC | Thermal Resistance Junction-Case | TO-263 | - | - | 0.5 | C/W |
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