Nexperia PBRN113ZT 215 NPN PB RET transistor designed for switching and high current gain in automotive applications
Product Overview
The Nexperia PBRN113ZT is an NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It features a 600 mA output current capability, low collector-emitter saturation voltage (VCEsat), and high current gain (hFE). The integrated bias resistors reduce component count, pick and place costs, and simplify circuit design. This device is suitable for switching loads and as a medium current peripheral driver.
Product Attributes
- Brand: Nexperia
- Product Type: NPN PB RET (Resistor-Equipped Transistor)
- Package Type: SOT23 (TO-236AB)
- Resistor R1: 1 k
- Resistor R2: 10 k
- PNP Complement: PBRP113ZT
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | open base | - | - | 40 | V |
| IO | Output current | [1] | - | - | 600 | mA |
| R1 | Bias resistor 1 | [2] | 0.7 | 1 | 1.3 | k |
| R2/R1 | Bias resistor ratio | [2] | 9 | 10 | 11 | - |
| VCBO | Collector-base voltage | open emitter | - | - | 40 | V |
| VEBO | Emitter-base voltage | open collector | - | - | 5 | V |
| VI | Input voltage | positive | - | - | 10 | V |
| VI | Input voltage | negative | - | - | -5 | V |
| IO | Output current | [1] | - | - | 600 | mA |
| IORM | Repetitive peak output current | tp 1 ms; 0.33 | - | - | 700 | mA |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 250 | mW |
| Ptot | Total power dissipation | Tamb 25 C [2] | - | - | 370 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance junction to ambient | in free air [1] | - | - | 500 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | [2] | - | - | 338 | K/W |
| Rth(j-sp) | Thermal resistance junction to solder point | - | - | - | 105 | K/W |
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 40 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 10 mA; IB = 0 A; Tamb = 25 C | 40 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tamb = 25 C | - | - | 0.5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 0.8 | mA |
| hFE | DC current gain | VCE = 5 V; IC = 50 mA; Tamb = 25 C | 300 | 450 | - | - |
| hFE | DC current gain | VCE = 5 V; IC = 300 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 500 | 750 | - | - |
| hFE | DC current gain | VCE = 5 V; IC = 600 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 500 | 720 | - | - |
| hFE | DC current gain | VCE = 5 V; IC = 800 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 450 | 650 | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 50 mA; IB = 2.5 mA; Tamb = 25 C | - | 25 | 35 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 200 mA; IB = 10 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 60 | 85 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 500 mA; IB = 10 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 160 | 220 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 600 mA; IB = 6 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 270 | 550 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 800 mA; IB = 8 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 560 | 1150 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A; Tamb = 25 C | 0.3 | 0.5 | 1 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 20 mA; Tamb = 25 C | 0.4 | 0.7 | 1.4 | V |
| R1 | Bias resistor 1 | [1] | 0.7 | 1 | 1.3 | k |
| R2/R1 | Bias resistor ratio | [1] | 9 | 10 | 11 | - |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | 7 | - | pF |
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 m copper, tin-plated and standard footprint.
[2] See section "Test information" for resistor calculation and test conditions.
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