Silicon Carbide normally on JFET transistor onsemi UJ3N120065K3S for power management and protection
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Product Description
Product Overview
The onsemi UJ3N120065K3S is a high-performance G3 Silicon Carbide (SiC) normally-on JFET transistor designed for power applications. It features ultra-low on-resistance (RDS(on)) and gate charge (QG), leading to reduced conduction and switching losses. Its normally-on characteristic at VGS = 0 V makes it suitable for current protection circuits without active control and for cascode configurations. This device is Pb-Free, Halogen Free, and ROHS Compliant.
Product Attributes
- Brand: onsemi
- Material: Silicon Carbide (SiC)
- Certifications: Pb-Free, Halogen Free, ROHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-source Breakdown Voltage | BVDS | VGS = -20 V, ID = 1 mA | 1200 | - | - | V |
| Total Drain Leakage Current | IDSS | VDS = 1200 V, VGS = -20 V, TJ = 25 C | - | 5 | 30 | A |
| Total Gate Leakage Current | IGSS | VGS = -20 V, TJ = 25 C | - | 0.1 | 50 | A |
| Drain-source On-resistance | RDS(on) | VGS = 2 V, ID = 10 A, TJ = 25 C | - | 55 | - | m |
| Drain-source On-resistance | RDS(on) | VGS = 0 V, ID = 10 A, TJ = 25 C | - | 66 | 90 | m |
| Gate Threshold Voltage | VG(th) | VDS = 5 V, ID = 35 mA | -9.3 | -6.6 | -4.7 | V |
| Input Capacitance | Ciss | VDS = 100 V, VGS = -20 V, f = 100 kHz | - | 1008 | - | pF |
| Output Capacitance | Coss | VDS = 100 V, VGS = -20 V, f = 100 kHz | - | 100 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS = 100 V, VGS = -20 V, f = 100 kHz | - | 95 | - | pF |
| Total Gate Charge | QG | VDS = 800 V, ID = 25 A, VGS = -18 V to 0 V | - | 114 | - | nC |
| Turn-on Energy | EON | VDS = 800 V, ID = 25 A, Gate Driver = -18 V to 0 V, RG = 1 , Inductive Load, FWD: UJ2D1215T, TJ = 25 C | - | 785 | - | J |
| Turn-off Energy | EOFF | VDS = 800 V, ID = 25 A, Gate Driver = -18 V to 0 V, RG = 1 , Inductive Load, FWD: UJ2D1215T, TJ = 25 C | - | 150 | - | J |
| Continuous Drain Current | ID | TC = 25 C | - | 34 | - | A |
| Pulsed Drain Current | IDM | TC = 25 C | - | 90 | - | A |
| Power Dissipation | Ptot | TC = 25 C | - | 254 | - | W |
| Maximum Junction Temperature | TJ,max | - | - | 175 | - | C |
| Thermal Resistance, Junction-to-case | RJC | - | - | 0.45 | 0.59 | C/W |
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