Pb Free digital switching N Channel JFET transistor onsemi MMBFJ110 with very low on resistance

Name: Pb Free digital switching N Channel JFET transistor onsemi MMBFJ110 with very low on resistance
Brand: Hefei Purple Horn E-Commerce Co., Ltd.

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Product Description

Product Overview

The MMBFJ110 is an N-Channel JFET specifically designed for digital switching applications requiring very low on-resistance. Sourced from Process 58, this device is Pb-Free.

Product Attributes

Brand: ON Semiconductor
Origin: Sourced from Process 58
Certifications: Pb-Free

Technical Specifications

Parameter	Symbol	Test Condition	Min	Max	Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage	V(BR)GSS	IG = -10 A, VDS = 0	-25	-	V
Gate Reverse Current	IGSS	VGS = -15 V, VDS = 0	-	-3.0	nA
Gate Reverse Current	IGSS	VGS = -15 V, VDS = 0, TA = 100C	-	-200	nA
Gate-Source Cut-Off Voltage	VGS(off)	VDS = 15 V, ID = 10 nA	-0.5	-4.0	V
ON CHARACTERISTICS
Zero-Gate Voltage Drain Current	IDSS	VDS = 15 V, VGS = 0 (Note 4)	10	-	mA
Drain-Source On Resistance	rDS(on)	VDS 0.1 V, VGS = 0	-	18
SMALL SIGNAL CHARACTERISTICS
Drain-Gate & Source-Gate On Capacitance	Cdg(on), Csg(on)	VDS = 0, VGS = 0, f = 1.0 MHz	-	85	pF
Drain-Gate & Source-Gate Off Capacitance	Cdg(off), Csg(off)	VDS = 0, VGS = -10 V, f = 1.0 MHz	-	15	pF
MAXIMUM RATINGS
DrainGate Voltage	VDG			25	V
GateSource Voltage	VGS			-25	V
Forward Gate Current	IGF			10	mA
Junction Temperature	TJ			150	C
Storage Temperature Range	TJ, TSTG		-55	150	C
THERMAL CHARACTERISTICS
Total Device Dissipation	PD	TA = 25C		460	mW
Derate Above 25C				3.68	mW/C
Thermal Resistance, Junction-to-Ambient	RJA	Device mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead minimum 6 cm.		270	C/W