263 7 packaged Silicon Carbide FET onsemi UF3C120400B7S for switching in power electronics systems
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Product Description
Product Description
This Silicon Carbide (SiC) FET device features a unique cascode circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. Its standard gate-drive characteristics enable it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in the TO-263-7 package, this device offers ultra-low gate charge and exceptional reverse recovery, making it ideal for switching inductive loads and applications requiring standard gate drive.
Product Attributes
- Brand: onsemi
- Material: Silicon Carbide (SiC)
- Certifications: Pb-Free, Halogen Free, RoHS Compliant
- ESD Protection: HBM Class 2, CDM Class C3
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| General Characteristics | ||||
| On-resistance | RDS(on) | Typ | 410 | mΩ |
| Operating Temperature | Max | 175 | °C | |
| Reverse Recovery Charge | Qrr | Typ | 51 | nC |
| Body Diode Forward Voltage | VFSD | Typ | 1.5 | V |
| Gate Charge | QG | Typ | 22.5 | nC |
| Drain-source Breakdown Voltage | BVDS | VGS = 0 V, ID = 1 mA | 1200 | V |
| Total Drain Leakage Current | IDSS | VDS = 1200 V, VGS = 0 V, TJ = 25 °C | 0.4 | µA |
| Total Gate Leakage Current | IGSS | VDS = 0 V, TJ = 25 °C, VGS = -20 V / +20 V | ±20 | nA |
| Gate Threshold Voltage | VG(th) | VDS = 5 V, ID = 10 mA | 3 - 6 | V |
| Maximum Ratings | ||||
| Drain-source Voltage | VDS | DC | 1200 | V |
| Gate-source Voltage | VGS | DC | -25 to +25 | V |
| Continuous Drain Current | ID | TC = 25 °C | 7.6 | A |
| Pulsed Drain Current | IDM | TC = 25 °C | 14 | A |
| Power Dissipation | Ptot | TC = 25 °C | 100 | W |
| Maximum Junction Temperature | TJ, max | 175 | °C | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 | °C | |
| Thermal Characteristics | ||||
| Thermal Resistance, Junction-to-Case | R JC | 1.2 - 1.5 | °C/W | |
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