Pb-Free NH MMBTA06 NPN Transistor with High Collector Base Breakdown Voltage in SOT-23 Package
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Product Description
Product Overview
The MMBTA06 is an NPN transistor from Niuhang Specification Electronic Co. Ltd, designed for high current capacity in a compact SOT-23 package. It features an epitaxial planar type construction and is available in a Pb-Free package. This transistor is suitable for general-purpose applications requiring a robust and reliable component.
Product Attributes
- Brand: Niuhang Specification Electronic Co. Ltd
- Package: SOT-23
- Certifications: Epoxy UL: 94V-0
- Mounting Position: Any
- Material: Pb-Free Package is available
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 80 | - | - | V | IC=100mA,IB=10mA |
| Collector-Base Breakdown Voltage | V(BR)CBO | 80 | - | - | V | VCB=200,IE=0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 80 | - | - | V | VEB=6V,IC=0 |
| Collector Cutoff Current | ICBO | - | - | 100 | nA | VCE=1V,IB=0 |
| Emitter Cutoff Current | IEBO | - | - | 0.25 | A | VCE=1V,Ic=100mA |
| DC Current Gain | HFE(1) | - | - | - | - | VCE=1V,IC=10mA |
| DC Current Gain | HFE(2) | - | - | - | - | VCE=1V,Ic=100mA |
| Base-Emitter Saturation Voltage | VBE(Sat) | - | - | 1.2 | V | IC=100mA,IB=10mA |
| Collector-Emitter Saturation Voltage | VCE(Sat) | - | - | 0.25 | V | IC=100mA,IB=10mA |
| Transition Frequency | FT | - | 100 | - | MHz | VCE=2V,IC=10mA,f=100MHz |
| Collector Current | Ic | - | - | 0.5 | A | - |
| Collector Power Dissipation | PC | - | - | 300 | mW | - |
| Junction Temperature | TJ | -55 | - | 150 | - | |
| Storage Temperature Range | TSTG | -55 | - | 150 | - | |
| Thermal Resistance (Junction to Ambient) | RJA | - | 416 | - | /W | Typical (Note 2) |
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