Low gate threshold voltage and fast switching ORIENTAL SEMI SFS08R07GF Enhancement Mode N Channel Power MOSFET
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Product Description
Product Overview
The SFS08R07GF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, engineered with their unique FSMOS technology. This device offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The low Vth series is specifically designed for synchronous rectification power systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power supplies.
Product Attributes
- Brand: Oriental Semiconductor
- Product Series: FSMOS
- Technology: Enhancement Mode N-Channel Power MOSFET
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
|---|---|---|---|---|---|---|
| General Features | ||||||
| Drain-source breakdown voltage | BVDSS | 80 | V | VGS=0 V, ID=250 A | ||
| Gate threshold voltage | VGS(th) | 1.0 | 2.5 | V | VDS=VGS, ID=250 A | |
| Drain-source on-state resistance | RDS(ON) | 5.9 | 7 | m | VGS=10 V, ID=12 A | |
| Drain-source on-state resistance | RDS(ON) | 7.1 | 10 | m | VGS=4.5 V, ID=9 A | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=20 V | ||
| Gate-source leakage current | IGSS | -100 | nA | VGS=-20 V | ||
| Drain-source leakage current | IDSS | 1 | A | VDS=80 V, VGS=0 V | ||
| Gate resistance | RG | 3.3 | =1 MHz, Open drain | |||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | 2028 | pF | VGS=0 V, VDS=25 V, =100 kHz | ||
| Output capacitance | Coss | 717 | pF | VGS=0 V, VDS=25 V, =100 kHz | ||
| Reverse transfer capacitance | Crss | 53.9 | pF | VGS=0 V, VDS=25 V, =100 kHz | ||
| Turn-on delay time | td(on) | 22.2 | ns | VGS=10 V, VDS=50 V, RG=2.5 , ID=25 A | ||
| Rise time | tr | 6.3 | ns | VGS=10 V, VDS=50 V, RG=2.5 , ID=25 A | ||
| Turn-off delay time | td(off) | 47.5 | ns | VGS=10 V, VDS=50 V, RG=2.5 , ID=25 A | ||
| Fall time | tf | 8.8 | ns | VGS=10 V, VDS=50 V, RG=2.5 , ID=25 A | ||
| Gate Charge Characteristics | ||||||
| Total gate charge | Qg | 28.9 | nC | VGS=10 V, VDS=50 V, ID=25 A | ||
| Gate-source charge | Qgs | 5.4 | nC | VGS=10 V, VDS=50 V, ID=25 A | ||
| Gate-drain charge | Qgd | 4.9 | nC | VGS=10 V, VDS=50 V, ID=25 A | ||
| Gate plateau voltage | Vplateau | 3.5 | V | VGS=10 V, VDS=50 V, ID=25 A | ||
| Body Diode Characteristics | ||||||
| Diode forward voltage | VSD | 1.3 | V | IS=12 A, VGS=0 V | ||
| Reverse recovery time | trr | 51.3 | ns | VR=50 V, IS=25 A, di/dt=100 A/s | ||
| Reverse recovery charge | Qrr | 60.6 | nC | VR=50 V, IS=25 A, di/dt=100 A/s | ||
| Peak reverse recovery current | Irrm | 2 | A | VR=50 V, IS=25 A, di/dt=100 A/s | ||
| Absolute Maximum Ratings | ||||||
| Drain source voltage | VDS | 80 | V | Tj=25C unless otherwise noted | ||
| Gate source voltage | VGS | 20 | V | Tj=25C unless otherwise noted | ||
| Continuous drain current | ID | 64 | A | TC=25 C, Note 1 | ||
| Pulsed drain current | ID, pulse | 192 | A | TC=25 C, Note 2 | ||
| Continuous diode forward current | IS | 64 | A | TC=25 C, Note 1 | ||
| Diode pulsed current | IS, Pulse | 192 | A | TC=25 C, Note 2 | ||
| Power dissipation | PD | 87 | W | TC=25 C, Note 3 | ||
| Single pulsed avalanche energy | EAS | 25 | mJ | Note 5 | ||
| Operation and storage temperature | TstgTj | -55 | 175 | C | ||
| Thermal Characteristics | ||||||
| Thermal resistance, junction-case | RJC | 1.72 | C/W | |||
| Thermal resistance, junction-ambient | RJA | 62 | C/W | Note 4 | ||
| Package Information (PDFN5*6-P) | ||||||
| Dimension A | 1.00 | 1.10 | 1.20 | mm | ||
| Dimension b | 0.30 | 0.40 | 0.50 | mm | ||
| Dimension c | 0.154 | 0.254 | 0.354 | mm | ||
| Dimension D1 | 5.00 | 5.20 | 5.40 | mm | ||
| Dimension D2 | 3.80 | 4.10 | 4.25 | mm | ||
| Dimension e | 1.17 | 1.27 | 1.37 | mm | ||
| Dimension E1 | 5.95 | 6.15 | 6.35 | mm | ||
| Dimension E2 | 5.66 | 5.86 | 6.06 | mm | ||
| Dimension E4 | 3.52 | 3.72 | 3.92 | mm | ||
| Dimension H | 0.40 | 0.50 | 0.60 | mm | ||
| Dimension L | 0.30 | 0.60 | 0.70 | mm | ||
| Dimension L1 | 0.12 | REF | mm | |||
| Dimension K | 1.15 | 1.30 | 1.45 | mm | ||
| Package Information (PDFN5*6-K) | ||||||
| Dimension A | 0.8 | 0.9 | 1.0 | mm | ||
| Dimension A1 | 0 | 0.03 | 0.05 | mm | ||
| Dimension b | 0.35 | 0.42 | 0.49 | mm | ||
| Dimension c | 0.254 | REF | mm | |||
| Dimension D | 4.9 | 5.0 | 5.1 | mm | ||
| Dimension F | 1.40 | REF | mm | |||
| Dimension E | 5.7 | 5.8 | 5.9 | mm | ||
| Dimension e | 1.27 | BSC | mm | |||
| Dimension H | 5.95 | 6.08 | 6.20 | mm | ||
| Dimension L1 | 0.10 | 0.14 | 0.18 | mm | ||
| Dimension G | 0.60 | REF | mm | |||
| Dimension K | 4.00 | REF | mm | |||
| Ordering Information | ||||||
| Product | Package | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Carton Box | Units/Carton Box |
| SFS08R07GF | PDFN5*6-P | 5000 | 2 | 10000 | 5 | 50000 |
| SFS08R07GF | PDFN5*6-K | 5000 | 2 | 10000 | 5 | 50000 |
Notes:
- 1) Calculated continuous current based on maximum allowable junction temperature.
- 2) Repetitive rating; pulse width limited by max. junction temperature.
- 3) Pd is based on max. junction temperature, using junction-case thermal resistance.
- 4) The value of RJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 C.
- 5) VDD=50 V, VGS=10 V, L=0.3 mH, starting Tj=25 C.
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