High Reliability NH MBR40L100CT Low Vf Schottky Barrier Rectifier for Automotive Electronics

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Product Description

Product Overview

The MBR40L100CT by Niuhang Electronic Specification Technology Co., Ltd. is a Low Vf Schottky Barrier Rectifier designed for high-efficiency applications. Leveraging NH'S Low Vf Schottky Barrier Chip Technology, it offers a super low forward voltage drop and low power loss, contributing to high reliability and fast switching speeds. Ideal for Switch Mode Power Supplies (SMPS), fast chargers, LED drivers, and automotive electronics.

Product Attributes

Brand: Niuhang Electronic Specification Technology Co., Ltd.
Model: MBR40L100CT
Technology: Low Vf Schottky Barrier Chip
Certifications: RoHS-Compliant, HF halogen-free, Pb-Free
Package: TO-220AB
Material: Molded with UL-94 ClassV-0 Recognized material
Terminals: Tin Plated Leads
Origin: China (implied by company name and datasheet format)

Technical Specifications

Parameter	Test Conditions	Symbol	Ratings	Unit
Maximum Repetitive Peak Reverse Voltage		VRRM	100	V
Maximum RMS Voltage		VRMS	70	V
Maximum DC Blocking Voltage		VDC	100	V
Maximum Average Forward Rectified Current (Per Diode)		IF(AV)	20	A
Maximum Average Forward Rectified Current (Total device)		IF(AV)	40	A
Peak Forward Surge Current (Per Diode)	8.3ms Single Half Sine-wave	IFSM	250	A
Current Squared Time (Per Diode)	t< 8.3ms	I2t	259.4	Asec
Maximum Mounting Torque	M3 screw	TMM	1.1	N.m
Instaneous Forward Voltage (Per Diode)	Ta=25, IF= 20.0 A	VF	0.76	V
Instaneous Forward Voltage (Per Diode)	Ta=100, IF= 20.0 A	VF	0.7	V
Instaneous Forward Voltage (Per Diode)	Ta=100, IF= 20.0 A	VF	0.85	V
Instaneous Forward Voltage (Per Diode)	Ta=100, IF= 20.0 A	VF	0.75	V
Maximum DC Reverse Current (at Rated DC Blocking Voltage)	Ta=25, VR=VRRM	IRRM	30	uA
Maximum DC Reverse Current (at Rated DC Blocking Voltage)	Ta=25, VR=VRRM	IRRM	120	uA
Maximum DC Reverse Current (at Rated DC Blocking Voltage)	Ta=100, VR=VRRM*80%	IRRM	2	mA
Maximum DC Reverse Current (at Rated DC Blocking Voltage)	Ta=100, VR=VRRM*80%	IRRM	18	mA
Typical Junction Capacitance (Per Diode)	4 V,1MHz	CJ	950	pF
Maximum Reverse Recovery Time	IF=0.5A, IR=1.0A, IRR=0.25A	Trr	35	nS
Operating Junction Temperature Range		TJ	-55 to 150
Storage Temperature Range		TSTD	-55 to 150
Thermal Resistance (Junction To Ambient)	Still Air Environment, With Steady-State, With Ta=25	RJA	62.5	/W
Thermal Resistance (Junction-Case)	Device Mounted On 75mm x 45mm x 2.5mm Alu. Heat., With Steady-State	RJC	2.0	/W