Switching Performance ORIENTAL SEMI OSG65R580FF MOSFET with Reduced Gate Charge and Low On Resistance
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Product Description
Product Overview
The OSG65R580FF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS series. It leverages charge balance technology to deliver exceptional low on-resistance and reduced gate charge, minimizing conduction and switching losses. This MOSFET is engineered for superior switching performance, robust avalanche capability, and high power density applications, making it ideal for achieving the highest efficiency standards. It is particularly suited for demanding applications such as PC power, LED lighting, telecom power, server power, EV chargers, and solar/UPS systems.
Product Attributes
- Brand: GreenMOS
- Manufacturer: Oriental Semiconductor
- Technology: Charge Balance Technology
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source voltage | VDS | 650 | V | |
| Gate-source voltage | VGS | ±30 | V | |
| Continuous drain current (TC=25 °C) | ID | 8 | A | |
| Continuous drain current (TC=100 °C) | ID | 5 | A | |
| Pulsed drain current (TC=25 °C) | ID, pulse | 24 | A | |
| Continuous diode forward current (TC=25 °C) | IS | 8 | A | |
| Diode pulsed current (TC=25 °C) | IS, pulse | 24 | A | |
| Power dissipation (TC=25 °C) | PD | 28 | W | |
| Single pulsed avalanche energy | EAS | 150 | mJ | |
| MOSFET dv/dt ruggedness (VDS=0…480 V) | dv/dt | 50 | V/ns | |
| Reverse diode dv/dt (VDS=0…480 V, ISD≤ID) | dv/dt | 15 | V/ns | |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | °C | |
| Thermal resistance, junction-case | RθJC | 4.5 | °C/W | |
| Thermal resistance, junction-ambient | RθJA | 62.5 | °C/W | |
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0 V, ID=250 μA |
| Gate threshold voltage | VGS(th) | 2.0 - 4.0 | V | VDS=VGS, ID=250 μA |
| Drain-source on-state resistance | RDS(ON) | 0.52 - 0.58 | Ω | VGS=10 V, ID=4 A |
| Drain-source on-state resistance (Tj=150 °C) | RDS(ON) | 1.27 | Ω | VGS=10 V, ID=4 A |
| Gate-source leakage current | IGSS | ±100 | nA | VGS=±30 V |
| Drain-source leakage current | IDSS | 1 | μA | VDS=650 V, VGS=0 V |
| Input capacitance | Ciss | 464 | pF | VGS=0 V, VDS=50 V, ƒ=1 MHz |
| Output capacitance | Coss | 38.3 | pF | VGS=0 V, VDS=50 V, ƒ=1 MHz |
| Reverse transfer capacitance | Crss | 1.47 | pF | VGS=0 V, VDS=50 V, ƒ=1 MHz |
| Turn-on delay time | td(on) | 18 | ns | VGS=10 V, VDS=380 V, RG=25 Ω, ID=8 A |
| Rise time | tr | 18 | ns | VGS=10 V, VDS=380 V, RG=25 Ω, ID=8 A |
| Turn-off delay time | td(off) | 27 | ns | VGS=10 V, VDS=380 V, RG=25 Ω, ID=8 A |
| Fall time | tf | 22 | ns | VGS=10 V, VDS=380 V, RG=25 Ω, ID=8 A |
| Total gate charge | Qg | 9.5 | nC | VGS=10 V, VDS=480 V, ID=8 A |
| Gate-source charge | Qgs | 2.7 | nC | VGS=10 V, VDS=480 V, ID=8 A |
| Gate-drain charge | Qgd | 3.8 | nC | VGS=10 V, VDS=480 V, ID=8 A |
| Gate plateau voltage | Vplateau | 5.6 | V | VGS=10 V, VDS=480 V, ID=8 A |
| Diode forward voltage | VSD | 1.3 | V | IS=8 A, VGS=0 V |
| Reverse recovery time | trr | 211 | ns | VR=400 V, IS=8 A, di/dt=100 A/μs |
| Reverse recovery charge | Qrr | 1.8 | μC | VR=400 V, IS=8 A, di/dt=100 A/μs |
| Peak reverse recovery current | Irrm | 10.5 | A | VR=400 V, IS=8 A, di/dt=100 A/μs |
| Product Name | OSG65R580FF | TO220F | ||
| Package Marking | OSG65R580F | TO220F | ||
| Package Type | TO220F-P | Units/Tube: 50 | ||
| Package Type | TO220F-J | Units/Tube: 50 |
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