Schottky Rectifier NH HBR20200P5 Metal Silicon Junction for Low Voltage High Frequency Applications

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Product Description

Product Overview

The HBR20200P5 is a Schottky rectifier from Niu Hang Specification Electronic Co. Ltd, featuring metal silicon junction and majority carrier conduction for low power loss and high reliability. It offers high forward surge capability and high-frequency operation, making it suitable for low voltage, high-frequency inverters, DC/DC converters, freewheeling, and polarity protection applications.

Product Attributes

Brand: Niu Hang (NH trademark)
Model: HBR20200P5
Package: PDFN5*6
Terminals: Lead solderable per J-STD-002 and JESD22-B102
Mounting Torque: 10 in-Ibs maximum

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Maximum Ratings
Maximum average forward rectified current	IF(AV)	Ta=25			10.0	A
Peak forward surge current	IFSM	8.3ms single half sine-wave superimposed on rated load (JEDEC method at rated TL)			200	A
Current Squared Time Per Diode	I2t	t<8.3ms			20.0	A2sec
Maximum repetitive peak reverse voltage	VRRM				200	V
Maximum RMS voltage	VRMS	Ta=25			140	V
Maximum DC blocking voltage	VDC				200	V
Maximum instantaneous forward voltage	VF	IF= 20.0 A (Note 1)	0.85	0.94		V
Maximum instantaneous reversecurrent at rated DC blockingvoltage	IRRM	VR= VRRM (Note 1)			1.0	mA
Typical junction capacitance	CJ	4V,1MHz		175		pF
Operating junction and storage temperature range	TJ, TSTG		-65		175
Storage temperature range	TSTG		-65		175
Thermal Characteristics
Typical thermal resistance (Note 2)	RJA	Ta=125		35		/W
Typical thermal resistance (Note 2)	RJL	Tc=25		10		/W