Enhancement Mode N Channel MOSFET ORIENTAL SEMI SFS06R06UGF with Excellent Avalanche Characteristics
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Product Description
Product Overview
The SFS06R06UGF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on their unique device design for low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically optimized for synchronous rectification systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power supplies.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: FSMOS MOSFET
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source voltage (min @ Tj(max)) | VDS | 60 | V | |
| Pulse drain current | ID, pulse | 210 | A | |
| RDS(ON) (max @ VGS=10V) | RDS(ON) | 4.5 | m | |
| Total gate charge | Qg | 30 | nC | |
| Product Name | SFS06R06UGF | |||
| Package Marking | SFS06R06UG | |||
| Package Type | PDFN5x6 | |||
| Drain-source voltage | VDS | 60 | V | Tj=25C unless otherwise noted |
| Gate-source voltage | VGS | 20 | V | Tj=25C unless otherwise noted |
| Continuous drain current (TC=25 C) | ID | 70 | A | TC=25 C |
| Pulsed drain current (TC=25 C) | ID, pulse | 210 | A | TC=25 C |
| Continuous diode forward current (TC=25 C) | IS | 70 | A | TC=25 C |
| Diode pulsed current (TC=25 C) | IS, pulse | 210 | A | TC=25 C |
| Power dissipation (TC=25 C) | PD | 101 | W | TC=25 C |
| Single pulsed avalanche energy | EAS | 66 | mJ | Tj=25 C |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | C | |
| Thermal resistance, junction-case | RJC | 1.24 | C/W | |
| Thermal resistance, junction-ambient | RJA | 62 | C/W | Ta=25 C, 1 inch FR-4 board, 2oz. Copper |
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS=0 V, ID=250 A |
| Gate threshold voltage | VGS(th) | 1.0 (Min), 2.5 (Max) | V | VDS=VGS, ID=250 A |
| Drain-source on-state resistance | RDS(ON) | 3.5 (Typ), 4.5 (Max) | m | VGS=10 V, ID=20 A |
| Drain-source on-state resistance | RDS(ON) | 4.5 (Typ), 7 (Max) | m | VGS=4.5 V, ID=10 A |
| Gate-source leakage current | IGSS | 100 | nA | VGS=20 V |
| Gate-source leakage current | IGSS | -100 | nA | VGS=-20 V |
| Drain-source leakage current | IDSS | 1 | A | VDS=60 V, VGS=0 V |
| Gate Resistance | RG | 2.8 | =1 MHz, Open drain | |
| Input capacitance | Ciss | 2136 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Output capacitance | Coss | 332 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Reverse transfer capacitance | Crss | 10.6 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Turn-on delay time | td(on) | 22.9 | ns | VGS=10 V, VDS=50 V, RG=2 , ID=25 A |
| Rise time | tr | 6.5 | ns | VGS=10 V, VDS=50 V, RG=2 , ID=25 A |
| Turn-off delay time | td(off) | 45.7 | ns | VGS=10 V, VDS=50 V, RG=2 , ID=25 A |
| Fall time | tf | 20.4 | ns | VGS=10 V, VDS=50 V, RG=2 , ID=25 A |
| Total gate charge | Qg | 30 | nC | VGS=10 V, VDS=50 V, ID=25 A |
| Gate-source charge | Qgs | 5.8 | nC | VGS=10 V, VDS=50 V, ID=25 A |
| Gate-drain charge | Qgd | 6.1 | nC | VGS=10 V, VDS=50 V, ID=25 A |
| Gate plateau voltage | Vplateau | 3.6 | V | VGS=10 V, VDS=50 V, ID=25 A |
| Diode forward voltage | VSD | 1.3 | V | IS=20 A, VGS=0 V |
| Reverse recovery time | trr | 50.3 | ns | VR=50 V, IS=25 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 45.1 | nC | VR=50 V, IS=25 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 1.5 | A | VR=50 V, IS=25 A, di/dt=100 A/s |
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Sellina