Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFS06R06PF with Low RDS ON and Fast Switching
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Product Description
Product Overview
The SFS06R06PF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, designed with unique device technology to deliver low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically optimized for synchronous rectification power systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power supplies.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: FSMOS MOSFET
- Package Marking: SFS06R06P
- RoHS Compliant: Yes
- Pb Free: Yes
- Halogen Free: Yes
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source voltage (min @ Tj(max)) | VDS, min | 60 | V | |
| Pulsed drain current | ID, pulse | 210 | A | |
| Drain-source on-state resistance (max @ VGS=10V) | RDS(ON) max | 6 | m | VGS=10V |
| Total gate charge | Qg | 30 | nC | VGS=10 V, VDS=50 V, ID=25 A |
| Drain source voltage | VDS | 60 | V | Tj=25C |
| Gate source voltage | VGS | 20 | V | Tj=25C |
| Continuous drain current (TC=25 C) | ID | 70 | A | TC=25 C |
| Pulsed drain current (TC=25 C) | ID, pulse | 210 | A | TC=25 C |
| Continuous diode forward current (TC=25 C) | IS | 70 | A | TC=25 C |
| Diode pulsed current (TC=25 C) | IS, Pulse | 210 | A | TC=25 C |
| Power dissipation (TC=25 C) | PD | 87 | W | TC=25 C |
| Single pulsed avalanche energy (EAS) | EAS | 66 | mJ | VDD=30 V, VGS=10 V, L=0.3 mH, starting Tj=25 C |
| Operation and storage temperature | TstgTj | -55 to 150 | C | |
| Thermal resistance, junction-case | RJC | 1.44 | C/W | |
| Thermal resistance, junction-ambient | RJA | 62 | C/W | Mounted on 1 in FR-4 board with 2oz. Copper, still air, Ta=25 C |
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS=0 V, ID=250 A |
| Gate threshold voltage | VGS(th) | 1.0 - 2.5 | V | VDS=VGS, ID=250 A |
| Drain-source on-state resistance | RDS(ON) | 4.7 - 6 | m | VGS=10 V, ID=20 A |
| Drain-source on-state resistance | RDS(ON) | 6.4 - 10 | m | VGS=4.5 V, ID=10 A |
| Gate-source leakage current | IGSS | 100 | nA | VGS=20 V |
| Drain-source leakage current | IDSS | 1 | A | VDS=60 V, VGS=0 V |
| Input capacitance | Ciss | 2136 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Output capacitance | Coss | 332 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Reverse transfer capacitance | Crss | 10.6 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Turn-on delay time | td(on) | 22.9 | ns | VGS=10 V, VDS=50 V, RG=2 , ID=25 A |
| Rise time | tr | 6.5 | ns | VGS=10 V, VDS=50 V, RG=2 , ID=25 A |
| Turn-off delay time | td(off) | 45.7 | ns | VGS=10 V, VDS=50 V, RG=2 , ID=25 A |
| Fall time | tf | 20.4 | ns | VGS=10 V, VDS=50 V, RG=2 , ID=25 A |
| Total gate charge | Qg | 30 | nC | VGS=10 V, VDS=50 V, ID=25 A |
| Gate-source charge | Qgs | 5.8 | nC | VGS=10 V, VDS=50 V, ID=25 A |
| Gate-drain charge | Qgd | 6.1 | nC | VGS=10 V, VDS=50 V, ID=25 A |
| Gate plateau voltage | Vplateau | 3.6 | V | VGS=10 V, VDS=50 V, ID=25 A |
| Diode forward voltage | VSD | 1.3 | V | IS=20 A, VGS=0 V |
| Reverse recovery time | trr | 50.3 | ns | VR=50 V, IS=25 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 45.1 | nC | VR=50 V, IS=25 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 1.5 | A | VR=50 V, IS=25 A, di/dt=100 A/s |
| Package Type | TO220-J |
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