Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFG08R06DF with Low RDS ON and Fast Switching
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Product Description
Product Overview
The SFG08R06DF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on their unique SFGMOS technology. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically optimized for synchronous rectification systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power supplies.
Product Attributes
- Brand: Oriental Semiconductor
- Technology: SFGMOS
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Package Type: TO252-J
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source voltage (min @ Tj(max)) | VDS | 80 | V | Tj(max) |
| Pulsed drain current | ID, pulse | 300 | A | TC=25 C |
| Drain-source on-state resistance (max @ VGS=10V) | RDS(ON) | 6.5 | m | VGS=10V |
| Total gate charge | Qg | 55.2 | nC | VGS=10V, VDS=50V, ID=25A |
| Drain-source breakdown voltage | BVDSS | 80 | V | VGS=0V, ID=250A |
| Gate threshold voltage | VGS(th) | 1.0 - 2.5 | V | VDS=VGS, ID=250A |
| Continuous drain current (TC=25 C) | ID | 100 | A | TC=25 C |
| Continuous diode forward current (TC=25 C) | IS | 100 | A | TC=25 C |
| Power dissipation (TC=25 C) | PD | 148 | W | TC=25 C |
| Single pulsed avalanche energy | EAS | 80 | mJ | VDD=50V, VGS=10V, L=0.3mH, starting Tj=25 C |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | C | |
| Thermal resistance, junction-case | RJC | 0.84 | C/W | |
| Thermal resistance, junction-ambient | RJA | 62 | C/W | Device mounted on 1 in FR-4 board, 2oz. Copper, still air, Ta=25 C |
| Gate-source voltage | VGS | 20 | V | |
| Input capacitance | Ciss | 3869.9 | pF | VGS=0V, VDS=40V, =100kHz |
| Output capacitance | Coss | 1304.2 | pF | VGS=0V, VDS=40V, =100kHz |
| Reverse transfer capacitance | Crss | 50.9 | pF | VGS=0V, VDS=40V, =100kHz |
| Turn-on delay time | td(on) | 22.0 | ns | VGS=10V, VDS=50V, RG=2, ID=25A |
| Rise time | tr | 21.5 | ns | VGS=10V, VDS=50V, RG=2, ID=25A |
| Turn-off delay time | td(off) | 62.7 | ns | VGS=10V, VDS=50V, RG=2, ID=25A |
| Fall time | tf | 61.4 | ns | VGS=10V, VDS=50V, RG=2, ID=25A |
| Total gate charge | Qg | 55.2 | nC | VGS=10V, VDS=50V, ID=25A |
| Gate-source charge | Qgs | 7.1 | nC | VGS=10V, VDS=50V, ID=25A |
| Gate-drain charge | Qgd | 14.6 | nC | VGS=10V, VDS=50V, ID=25A |
| Gate plateau voltage | Vplateau | 3.4 | V | VGS=10V, VDS=50V, ID=25A |
| Diode forward voltage | VSD | 1.3 | V | IS=12A, VGS=0V |
| Reverse recovery time | trr | 75.0 | ns | IS=25A, di/dt=100A/s |
| Reverse recovery charge | Qrr | 159.8 | nC | IS=25A, di/dt=100A/s |
| Peak reverse recovery current | Irrm | 3.4 | A | IS=25A, di/dt=100A/s |
| Package Marking | SFG8R06D | TO252 | ||
| Units/Reel | 2500 | TO252-J | ||
| Reels/Inner Box | 2 | TO252-J | ||
| Units/Inner Box | 5000 | TO252-J | ||
| Inner Boxes/Carton Box | 5 | TO252-J | ||
| Units/Carton Box | 25000 | TO252-J |
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