Charge Balance Technology Based Power MOSFET ORIENTAL SEMI OSG65R360DTF for and Low Conduction Loss
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Product Description
Product Overview
The Oriental Semiconductor GreenMOS OSG65R360DTF is a high-voltage N-Channel Power MOSFET engineered with charge balance technology for outstanding low on-resistance and reduced gate charge. This series is optimized for extreme switching performance, minimizing conduction and switching losses to deliver superior efficiency and high power density. It offers robust avalanche capability and is ideal for demanding applications such as PC power supplies, LED lighting, telecom power, server power, EV chargers, and solar/UPS systems.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: GreenMOS
- Technology: Charge Balance Technology
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source voltage (min @ Tj(max)) | VDS, min @ Tj(max) | 700 | V | |
| Pulse drain current | ID, pulse | 33 | A | |
| RDS(ON) (max @ VGS=10V) | RDS(ON) | 360 | m | VGS=10V |
| Total gate charge | Qg | 13.3 | nC | VGS=10V, VDS=400V, ID=6A |
| Drain-source voltage | VDS | 650 | V | Tj=25C |
| Gate-source voltage | VGS | 30 | V | |
| Continuous drain current (TC=25C) | ID | 11 | A | TC=25C |
| Continuous drain current (TC=100C) | ID | 7 | A | TC=100C |
| Continuous diode forward current (TC=25C) | IS | 11 | A | TC=25C |
| Power dissipation (TC=25C) | PD | 63 | W | TC=25C |
| Single pulsed avalanche energy | EAS | 150 | mJ | VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25C |
| Thermal resistance, junction-case | RJC | 1.98 | C/W | |
| Thermal resistance, junction-ambient | RJA | 62 | C/W | Mounted on 1 in FR-4 board with 2oz. Copper, still air, Ta=25C |
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0 V, ID=250 A |
| Gate threshold voltage | VGS(th) | 2.9 - 3.9 | V | VDS=VGS, ID=250 A |
| Drain-source on-state resistance | RDS(ON) | 0.32 - 0.36 | VGS=10 V, ID=3 A | |
| Input capacitance | Ciss | 587.3 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Output capacitance | Coss | 62.7 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Reverse transfer capacitance | Crss | 2.2 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Turn-on delay time | td(on) | 30.7 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=6 A |
| Rise time | tr | 33.9 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=6 A |
| Turn-off delay time | td(off) | 61.3 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=6 A |
| Fall time | tf | 25 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=6 A |
| Gate-source charge | Qgs | 2.2 | nC | VGS=10 V, VDS=400 V, ID=6 A |
| Gate-drain charge | Qgd | 5.4 | nC | VGS=10 V, VDS=400 V, ID=6 A |
| Gate plateau voltage | Vplateau | 6 | V | VGS=10 V, VDS=400 V, ID=6 A |
| Diode forward voltage | VSD | 1.3 | V | IS=11 A, VGS=0 V |
| Reverse recovery time | trr | 262.7 | ns | VR=400V, IS=6 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 2.4 | C | VR=400V, IS=6 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 19.4 | A | VR=400V, IS=6 A, di/dt=100 A/s |
| Product Name | OSG65R360DTF | |||
| Package Marking | OSG65R360DT | |||
| Package Type | TO252-C | |||
| Units/Reel | 2500 | |||
| Reels/Inner Box | 2 | |||
| Units/Inner Box | 5000 | |||
| Inner Box/Carton Box | 5 | |||
| Units/Carton Box | 25000 |
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