Power Electronics NH MBR10L100FCT Schottky Diode with Low Forward Voltage and Wide Temperature Range

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Product Description

Product Overview

The MBR20L100CT/FCT are low forward voltage drop Schottky rectifiers designed for high efficiency and reliability. They offer low power loss, high forward surge capability, and high-frequency operation, making them suitable for various power applications.

Product Attributes

Brand: Niu Hang
Origin: China
Certifications: RoHS 2011/65/EU, MIL-STD-202 Method 208
Terminals: Plated Leads, Solderable
Mounting Position: Any
Lead Free: Lead Free Finish, RoHS Compliant

Technical Specifications

Model	VRRM (V)	IF(AV) (A)	IFSM (A)	VF (V)	TJ (C)	TSTD (C)	RJC (C/W)
MBR10L100CT/FCT	100	10	150	0.65 (Typ.)	-55 to 150	-55 to 150	2.5 (TO-220AB) / 4.5 (TO-220F)
MBR20L100CT/FCT	100	20	150	0.65 (Typ.)	-55 to 150	-55 to 150	2.5 (TO-220AB) / 4.5 (TO-220F)

Electrical Characteristics (at 25 unless otherwise specified)

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test Conditions
Maximum average forward rectified current	IF(AV)	-	10	-	A	TA=125
Peak forward surge current 8.3ms single half sine-wave	IFSM	-	-	150	A	VRRM
Reverse current per diode	IR	-	0.3858	0.4094	mA	TA=125
Reverse current per diode	IR	-	0.01	-	uA	TA=25
Instaneous forward voltage per diode	VF	-	0.57	-	V	IF=1V,10KHz
Typical junction capacitance	CJ	-	80	-	pF	VR=0.5V, f=1MHz

Thermal Characteristics (at 25 unless otherwise specified)

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test Conditions
Typical thermal resistance	RJC	-	2.5	-	C/W	TO-220AB
Typical thermal resistance	RJC	-	4.5	-	C/W	TO-220F
Operating junction temperature	TJ	-55	-	150	C	-
Storage temperature range	TSTD	-55	-	150	C	-