Durable OSEN IRFP460PBF MOSFET featuring improved dvdt capability and high input impedance for power supplies

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Product Description

Product Overview

The IRFP460PBF is a 500V N-CHANNEL MOSFET from OSEN, designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive, and improved dv/dt capability with high ruggedness. This MOSFET is suitable for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.

Product Attributes

Brand: OSEN
Publication Order Number: [IRFP460PBF]
Revision: 21.2.10

Technical Specifications

Parameter	Symbol	Rating	Unit	Conditions
Absolute Maximum Ratings
Drain-Source Voltage	VDSS	500	V
Gate-Source Voltage-Continuous	VGS	±30	V
Drain Current-Continuous (Note 2)	ID	20	A
Drain Current-Single Pulsed (Note 1)	IDM	80	A
Power Dissipation (Note 2)	PD	240	W
Max.Operating junction temperature	Tj	150	°C
Electrical Characteristics
Static Characteristics
Drain-Source Breakdown Voltage (Note 1)	BVDSS	500	V	ID=250µA, VGS=0V, TJ=25°C
Gate Threshold Voltage	VGS(th)	2	V	VDS=VGS, ID=250µA
Drain-Source On-Resistance	RDS(on)	0.23	Ω	VGS=10V, ID=1A
Gate-Body Leakage Current	IGSS	±100	nA	VGS=±30V, VDS=0
Zero Gate Voltage Drain Current	IDSS	1	µA	VDS=500V, VGS=0
Forward Transconductance	gfs	25	S	VDS=40V, ID=10A
Switching Characteristics
Turn-On Delay Time	Td(on)	95	ns	VDS=250V, ID=20A, RG=25Ω(Note 2)
Rise Time	Tr	370	ns
Turn-Off Delay Time	Td(off)	110	ns
Fall Time	Tf	100	ns
Total Gate Charge	Qg	45	nC	VDS=480V, VGS=10V, ID=20A(Note 2)
Gate-Source Charge	Qgs	8.5	nC
Gate-Drain Charge	Qgd	18.5	nC
Dynamic Characteristics
Input Capacitance	Ciss	2200	pF	VDS=25V, VGS=0, f=1MHz
Output Capacitance	Coss	340	pF
Reverse Transfer Capacitance	Crss	27	pF
Continuous Drain-Source Diode Forward Current (Note 2)	IS	20	A
Diode Forward On-Voltage	VSD	1.4	V	IS=10A, VGS=0
Thermal Resistance, Junction to Case	Rth(j-c)	0.52	°C/W