Trench N Channel MOSFET OSEN OSPF90N03T Designed for DC to DC Converter and Synchronous Rectification
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Product Description
OSPF90N03T LOW Voltage Trench Nch MOSFET
The OSPF90N03T is a low voltage Trench N-channel MOSFET designed for high-performance applications. It features fast switching speed, low gate charge, and high power and current handling capability. This RoHS compliant component is ideal for DC to DC converters and synchronous rectification.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSPF90N03T
- Revision: 21.2.10
- Certifications: RoHS compliant
Technical Specifications
| Parameters | Unit | Conditions | Value |
| Drain-Source Voltage (VDSS) | V | 30 | |
| Gate-Source Voltage-Continuous (VGS) | V | 20 | |
| Drain Current-Continuous (ID) (Note 2) | A | Tc=25C | 90 |
| Drain Current-Single Pulsed (IDM) (Note 1) | A | 360 | |
| Power Dissipation (PD) (Note 2) | W | Tc=25C | 38 |
| Max.Operating junction temperature (Tj) | 150 | ||
| Drain-Source Breakdown Voltage Current (BVDSS) (Note 1) | V | ID=250AVGS=0V | 30 |
| Gate Threshold Voltage (VGS(th)) | V | VDS=VGSID=250A | 1.0 - 1.5 - 2.5 |
| Drain-Source On-Resistance (RDS(on)) | m | VGS=10VID=1A | -- 3.3 -- |
| Gate-Body Leakage Current (IGSS) | nA | VGS=25VVDS=0 | -- -- 100 |
| Zero Gate Voltage Drain Current (IDSS) | A | VDS=30VVGS=0 | -- -- 1 |
| Forward Transconductance (gfs) | S | VDS=10VID=20A | 20 -- -- |
| Turn-On Delay Time (Td(on)) | ns | VGS=10V, VDS=30V,ID=30A RG=1 | -- 15 -- |
| Rise Time (Tr) | ns | -- 13 -- | |
| Turn-Off Delay Time (Td(off)) | ns | -- 35 -- | |
| Fall Time (Tf) | ns | -- 10 -- | |
| Total Gate Charge (Qg) | nC | VDS=30VGS=4.5V ID=40A | -- 78 -- |
| Gate-Source Charge (Qgs) | nC | -- 15 -- | |
| Gate-Drain Charge (Qgd) | nC | -- 25 -- | |
| Input Capacitance (Ciss) | pF | VDS=20VVGS=0 f=1MHz | -- 3200 -- |
| Output Capacitance (Coss) | pF | -- 375 -- | |
| Reverse Transfer Capacitance (Crss) | pF | -- 60 -- | |
| Continuous Drain-Source Diode Forward Current (IS) (Note 2) | A | -- -- 90 | |
| Diode Forward On-Voltage (VSD) | V | IS=40AVGS=0 | -- -- 1.2 |
| Thermal Resistance, Junction to Case (Rth(j-c)) | /W | -- -- 3.29 |
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