Durable OSEN OSD50N10G 100V N Channel MOSFET with High Input Impedance and Fast Switching Speed
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Product Description
OSD50N10G 100V N-CHANNEL MOSFET
The OSD50N10G is a 100V N-Channel MOSFET designed for high efficiency applications. It features fast switching speed, high input impedance, low level drive, and improved dv/dt capability with high ruggedness. This MOSFET is suitable for use in high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts. It is available in a TO-252 package.
Product Attributes
- Brand: OSEN
- Origin: China (implied by .cn domain)
- Publication Order Number: OSD50N10G
- Revision: 21.2.10
Technical Specifications
| Symbol | Parameters | Unit | Conditions | Min | Typ | Max |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | V | 100 | |||
| VGS | Gate-Source Voltage-Continuous | V | ±20 | |||
| ID | Drain Current-Continuous (Note 2) | A | 50 | |||
| IDM | Drain Current-Single Pulsed (Note 1) | A | 200 | |||
| PD | Power Dissipation (Note 2) | W | 135 | |||
| Tj | Max.Operating junction temperature | 150 | ||||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage Current (Note 1) | V | ID=250µA, VGS=0V, TJ=25°C | 100 | -- | -- |
| VGS(th) | Gate Threshold Voltage | V | VDS=VGS, ID=250µA | 1.2 | 1.8 | 2.5 |
| RDS(on) | Drain-Source On-Resistance | mΩ | VGS=10V, ID=20A | -- | 14.5 | -- |
| IGSS | Gate-Body Leakage Current | nA | VGS=±20V, VDS=0 | -- | -- | ±100 |
| IDSS | Zero Gate Voltage Drain Current | µA | VDS=100V, VGS=0 | -- | -- | 1 |
| gfs | Forward Transconductance | S | VDS=15V, ID=25A | -- | 15 | -- |
| Switching Characteristics | ||||||
| Td(on) | Turn-On Delay Time | ns | VDS=55V, ID=50A, RG=5Ω (Note 2) | -- | 12.5 | -- |
| Tr | Rise Time | ns | -- | 12.5 | -- | |
| Td(off) | Turn-Off Delay Time | ns | -- | 85 | -- | |
| Tf | Fall Time | ns | -- | 90 | -- | |
| Qg | Total Gate Charge | nC | VDS=55V, VGS=10V, ID=50A (Note 2) | -- | 45 | -- |
| Qgs | Gate-Source Charge | nC | -- | 6.5 | -- | |
| Qgd | Gate-Drain Charge | nC | -- | 10 | -- | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | pF | VDS=25V, VGS=0, f=1MHz | -- | 1580 | -- |
| Coss | Output Capacitance | pF | -- | 350 | -- | |
| Crss | Reverse Transfer Capacitance | pF | -- | 120 | -- | |
| IS | Continuous Drain-Source Diode Forward Current (Note 2) | A | -- | -- | 50 | |
| VSD | Diode Forward On-Voltage | V | IS=20A, VGS=0 | -- | -- | 1.4 |
| Rth(j-c) | Thermal Resistance, Junction to Case | °C/W | -- | -- | 0.93 | |
Notes:
Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2: Pulse test: PW <= 300µs, duty cycle <= 2%.
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